欢迎访问ic37.com |
会员登录 免费注册
发布采购

MT16VDDT3264AG-335 参数 Datasheet PDF下载

MT16VDDT3264AG-335图片预览
型号: MT16VDDT3264AG-335
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR SDRAM UNBUFFERED DIMM]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 35 页 / 875 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT16VDDT3264AG-335的Datasheet PDF文件第14页浏览型号MT16VDDT3264AG-335的Datasheet PDF文件第15页浏览型号MT16VDDT3264AG-335的Datasheet PDF文件第16页浏览型号MT16VDDT3264AG-335的Datasheet PDF文件第17页浏览型号MT16VDDT3264AG-335的Datasheet PDF文件第19页浏览型号MT16VDDT3264AG-335的Datasheet PDF文件第20页浏览型号MT16VDDT3264AG-335的Datasheet PDF文件第21页浏览型号MT16VDDT3264AG-335的Datasheet PDF文件第22页  
256MB, 512MB, 1GB, 2GB (x64, DR)  
184-PIN DDR SDRAM UDIMM  
Ta b le 16: Ca p a cit a n ce  
Note: 11; notes appear on pages 2023  
PARAMETER  
SYMBOL  
MIN MAX  
UNITS  
CIO  
CI1  
CI1  
CI2  
CI3  
8
10  
48  
24  
15  
18  
pF  
pF  
pF  
pF  
pF  
Input/Output Capacitance: DQ, DQS, DM  
Input Capacitance: Command and Address  
Input Capacitance: S#, CKE  
32  
16  
11  
12  
Input Capacitance: CK0, CK0#  
Input Capacitance: CK1, CK1#; CK2, CK2#  
Ta b le 17: DDR SDRAM Co m p o n e n t Ele ct rica l Ch a ra ct e rist ics a n d Re co m m e n d e d  
AC Op e ra t in g Co n d it io n s  
Notes: 1–5, 13-15, 29, 48, 49; notes appear on pages 20–23; 0°C TA +70°C; VDD = VDDQ = +2.5V ±0.2V  
AC CHARACTERISTICS  
PARAMETER  
-335  
-262  
MIN MAX  
-0.75 +0.75 -0.75 +0.75  
-26A/-265  
SYMBOL MIN  
MAX  
MIN MAX UNITS NOTES  
tAC  
-0.7  
+0.7  
ns  
Access window of DQs from CK/  
CK#  
tCH  
tCL  
tCK (2.5)  
tCK (2)  
tDH  
tDS  
tDIPW  
tDQSCK  
tCK  
tCK  
ns  
0.45  
0.45  
6
0.55  
0.55  
13  
0.45  
0.45  
7.5  
0.55  
0.55  
13  
0.45  
0.45  
7.5  
0.55  
0.55  
13  
26  
CK high-level width  
CK low-level width  
Clock cycle time  
26  
CL = 2.5  
CL = 2  
41, 46  
41, 46  
23, 27  
23, 27  
27  
7.5  
13  
7.5/10  
0.5  
13  
7.5/10  
0.5  
13  
ns  
ns  
ns  
ns  
ns  
0.45  
0.45  
1.75  
-0.60  
DQ and DM input hold time relative to DQS  
DQ and DM input setup time relative to DQS  
DQ and DM input pulse width (for each input)  
0.5  
0.5  
1.75  
1.75  
+0.60 -0.75 +0.75 -0.75 +0.75  
Access window of DQS from CK/  
CK#  
tDQSH  
tDQSL  
tDQSQ  
tCK  
tCK  
ns  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
DQS input high pulse width  
DQS input low pulse width  
DQS-DQ skew, DQS to last DQ valid, per group,  
per access  
0.45  
1.25  
0.5  
0.5  
22, 23  
tDQSS  
tDSS  
tCK  
tCK  
0.75  
0.2  
0.75  
0.2  
1.25  
0.75  
0.2  
1.25  
Write command to first DQS latching transition  
DQS falling edge to CK rising -  
setup time  
tDSH  
tCK  
0.2  
0.2  
0.2  
DQS falling edge from CK rising -  
hold time  
tHP  
tHZ  
tLZ  
tCH,tCL  
+0.70  
tCH,tCL  
+0.75  
tCH,tCL  
+0.75  
ns  
ns  
ns  
ns  
31  
Half clock period  
16, 37  
16, 37  
12  
Data-out high-impedance window from CK/CK#  
Data-out low-impedance window from CK/CK#  
-0.70  
0.75  
-0.75  
0.90  
-0.75  
.90  
tIHF  
Address and control input hold time (fast slew  
rate)  
tISF  
Address and control input setup time (fast slew  
rate)  
0.75  
0.80  
0.90  
1
.90  
1
ns  
ns  
12  
12  
tIHS  
Address and control input hold time (slow slew  
rate)  
pdf: 09005aef80739fa5, source: 09005aef807397e5  
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2004 Micron Technology, Inc.  
18  
 复制成功!