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MT16VDDF6464HY-335 参数 Datasheet PDF下载

MT16VDDF6464HY-335图片预览
型号: MT16VDDF6464HY-335
PDF下载: 下载PDF文件 查看货源
内容描述: 小外形的DDR SDRAM DIMM [SMALL-OUTLINE DDR SDRAM DIMM]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 31 页 / 552 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512MB, 1GB (x64)  
200-PIN DDR SODIMM  
Table 5:  
Pin Descriptions  
Pin numbers may not correlate with symbols. Refer to Pin Assignment Tables on page 3 for more information  
PIN NUMBERS  
SYMBOL  
TYPE  
DESCRIPTION  
118, 119, 120  
WE#,  
CAS#,RAS#  
Input  
Command Inputs: RAS#, CAS#, and WE# (along with S#) define  
the command being entered.  
35, 37, 158, 160  
95, 96  
CK0, CK0#  
CK1, CK1#  
Input  
Input  
Clock: CK, CK# are differential clock inputs. All address and  
control input signals are sampled on the crossing of the  
positive edge of CK, and negative edge of CK#. Output data  
(DQs and DQS) is referenced to the crossings of CK and CK#.  
CKE0, CKE1  
Clock Enable: CKE HIGH activates and CKE LOW deactivates the  
internal clock, input buffers and output drivers. Taking CKE  
LOW provides PRECHARGE POWER-DOWN and SELF REFRESH  
operations (all device banks idle), or ACTIVE POWER-DOWN  
(row ACTIVE in any device bank). CKE is synchronous for  
POWER-DOWN entry and exit, and for SELF REFRESH entry. CKE  
is asynchronous for SELF REFRESH exit and for disabling the  
outputs. CKE must be maintained HIGH throughout read and  
write accesses. Input buffers (excluding CK, CK# and CKE) are  
disabled during POWER-DOWN. Input buffers (excluding CKE)  
are disabled during SELF REFRESH. CKE is an SSTL_2 input but  
will detect an LVCMOS LOW level after VDD is applied and  
until CKE is first brought HIGH. After CKE is brought HIGH, it  
becomes an SSTL_2 input only.  
121, 122  
116, 117  
S0#, S1#  
Input  
Chip Selects: S# enables (registered LOW) and disables  
(registered HIGH) the command decoder. All commands are  
masked when S# is registered HIGH. S# is considered part of  
the command code.  
BA0, BA1  
A0-A12  
Input  
Input  
Bank Address: BA0 and BA1 define to which device bank an  
ACTIVE, READ, WRITE, or PRECHARGE command is being  
applied.  
99, 100, 101, 102, 105,106,  
107, 108, 109, 110, 111, 112,  
115  
Address Inputs: Provide the row address for ACTIVE commands,  
and the column address and auto precharge bit (A10) for  
READ/WRITE commands, to select one location out of the  
memory array in the respective device bank. A10 sampled  
during a PRECHARGE command determines whether the  
PRECHARGE applies to one device bank (A10 LOW, device bank  
selected by BA0, BA1) or all device banks (A10 HIGH). The  
address inputs also provide the op-code during a MODE  
REGISTER SET command. BA0 and BA1 define which mode  
register (mode register or extended mode register) is loaded  
during the LOAD MODE REGISTER command.  
1, 2  
195  
VREF  
Input  
Input  
SSTL_2 reference voltage.  
SCL  
Serial Clock for Presence-Detect: SCL is used to synchronize the  
presence-detect data transfer to and from the module.  
194, 196, 198  
193  
SA0-SA2  
SDA  
Input  
Presence-Detect Address Inputs: These pins are used to  
configure the presence-detect device.  
Input/  
Output  
Serial Presence-Detect Data: SDA is a bidirectional pin used to  
transfer addresses and data into and out of the presence-  
detect portion of the module.  
12, 26, 48, 62, 134, 148, 170,  
184  
DM0-DM7  
Input  
Data Write Mask. DM LOW allows WRITE operation. DM HIGH  
blocks WRITE operation. DM lines do not affect READ  
operation.  
09005aef80a646bc  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN  
4
©2003 Micron Technology, Inc.  
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