欢迎访问ic37.com |
会员登录 免费注册
发布采购

MT16VDDF6464HY-335 参数 Datasheet PDF下载

MT16VDDF6464HY-335图片预览
型号: MT16VDDF6464HY-335
PDF下载: 下载PDF文件 查看货源
内容描述: 小外形的DDR SDRAM DIMM [SMALL-OUTLINE DDR SDRAM DIMM]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 31 页 / 552 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT16VDDF6464HY-335的Datasheet PDF文件第5页浏览型号MT16VDDF6464HY-335的Datasheet PDF文件第6页浏览型号MT16VDDF6464HY-335的Datasheet PDF文件第7页浏览型号MT16VDDF6464HY-335的Datasheet PDF文件第8页浏览型号MT16VDDF6464HY-335的Datasheet PDF文件第10页浏览型号MT16VDDF6464HY-335的Datasheet PDF文件第11页浏览型号MT16VDDF6464HY-335的Datasheet PDF文件第12页浏览型号MT16VDDF6464HY-335的Datasheet PDF文件第13页  
512MB, 1GB (x64)  
200-PIN DDR SODIMM  
Reserved states should not be used as unknown  
operation or incompatibility with future versions may  
result.  
Burst Length  
Read and write accesses to the DDR SDRAM are  
burst oriented, with the burst length being program-  
mable, as shown in Figure 5, Mode Register Definition  
Diagram. The burst length determines the maximum  
number of column locations that can be accessed for a  
given READ or WRITE command. Burst lengths of 2, 4,  
or 8 locations are available for both the sequential and  
the interleaved burst types.  
Figure 5: Mode Register Definition  
Diagram  
A8  
A6 A5 A4  
A1  
A0  
Address Bus  
A10  
A7  
A3 A2  
BA0 A12 A11  
A9  
BA1  
Reserved states should not be used, as unknown  
operation or incompatibility with future versions may  
result.  
14 13  
11  
9
8
6
5
4
1
12  
10  
7
3
2
0
Mode Register (Mx)  
0* 0*  
Operating Mode  
CAS Latency BT Burst Length  
When a READ or WRITE command is issued, a block  
of columns equal to the burst length is effectively  
selected. All accesses for that burst take place within  
this block, meaning that the burst will wrap within the  
block if a boundary is reached. The block is uniquely  
selected by A1–Ai when the burst length is set to two,  
by A2–Ai when the burst length is set to four and by  
A3–Ai when the burst length is set to eight (where Ai is  
the most significant column address bit for a given  
configuration. See Note 5 of Table 6, Burst Definition  
Table, on page 10, for Ai values). The remaining (least  
significant) address bit(s) is (are) used to select the  
starting location within the block. The programmed  
burst length applies to both read and write bursts.  
* M14 and M13 (BA1 and BA0)  
must be “0, 0” to select the  
base mode register (vs. the  
extended mode register).  
Burst Length  
M2 M1 M0  
M3 = 0  
Reserved  
2
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
4
8
Reserved  
Reserved  
Reserved  
Reserved  
Burst Type  
Sequential  
Interleaved  
M3  
0
1
Burst Type  
CAS Latency  
Reserved  
Reserved  
2
M6 M5 M4  
Accesses within a given burst may be programmed  
to be either sequential or interleaved; this is referred to  
as the burst type and is selected via bit M3.  
The ordering of accesses within a burst is deter-  
mined by the burst length, the burst type and the start-  
ing column address, as shown in Table 6, Burst  
Definition Table, on page 10.  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved  
Reserved  
Reserved  
2.5  
Reserved  
Read Latency  
M13 M12 M11 M10 M9 M8 M7  
M6-M0  
Valid  
Valid  
-
Operating Mode  
The READ latency is the delay, in clock cycles,  
between the registration of a READ command and the  
availability of the first bit of output data. The latency  
can be set to 2 or 2.5 clocks, as shown in Figure 6, CAS  
Latency Diagram, on page 10.  
0
0
-
0
0
-
0
0
-
0
0
-
0
0
-
0
1
-
0
0
-
Normal Operation  
Normal Operation/Reset DLL  
All other states reserved  
If a READ command is registered at clock edge n,  
and the latency is m clocks, the data will be available  
nominally coincident with clock edge n + m. The CAS  
Latency Table indicates the operating frequencies at  
which each CAS latency setting can be used.  
09005aef80a646bc  
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2003 Micron Technology, Inc.  
9
 复制成功!