512MB, 1GB (x64)
200-PIN DDR SODIMM
Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Operating Conditions (-335, -262) (Continued)
Notes: 1–5, 12–15, 29, 40; notes appear on pages 20–23; 0°Cꢀ? TA ? +70°C; VDD = VDDQ = +2.5V 0.2V
AC CHARACTERISTICS
-335
MAX
-262
MAX
PARAMETER
SYMBOL MIN
MIN
60
UNITS NOTES
tRC
60
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
tRFC
tRCD
tRP
tRPRE
tRPST
tRRD
tWPRE
tWPRES
tWPST
tWR
72
18
18
0.9
0.4
12
0.25
0
75
ns
ns
ns
44
37
15
15
tCK
1.1
0.6
0.9
0.4
15
1.1
0.6
tCK
DQS read postamble
ns
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
tCK
ns
0.25
0
18, 19
17
DQS write preamble setup time
DQS write postamble
tCK
ns
0.4
15
1
0.6
0.4
15
0.6
Write recovery time
tWTR
tCK
ns
1
Internal WRITE to READ command delay
Data valid output window
tQH -tDQSQ
70.3
tQH -tDQSQ
70.3
NA
22
21
21
tREFC
tREFI
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to VDD
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
µs
µs
ns
ns
7.8
7.8
tVTD
0
0
tXSNR
tXSRD
75
75
tCK
200
200
09005aef80a646bc
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
17
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