512MB, 1GB (x64)
200-PIN DDR SODIMM
Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Operating Conditions (-26A, -265, -202) (Continued)
Notes: 1–5, 12–15, 29, 40; notes appear on pages 20–23; 0°Cꢀ? TA ? +70°C; VDD = VDDQ = +2.5V 0.2V
AC CHARACTERISTICS
-26A
-265
-202
PARAMETER
SYMBOL MIN MAX MIN MAX MIN MAX UNITS NOTES
tRPRE
tRPST
tRRD
tWPRE
tWPRES
tWPST
tWR
tCK
tCK
ns
0.9
0.4
15
0.25
0
1.1
0.6
0.9
0.4
15
0.25
0
1.1
0.6
0.9
0.4
15
0.25
0
1.1
0.6
37
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
tCK
ns
DQS write preamble setup time
DQS write postamble
18, 19
17
tCK
ns
0.4
15
1
0.6
0.4
15
1
0.6
0.4
15
1
0.6
Write recovery time
tWTR
NA
tCK
ns
Internal WRITE to READ command delay
Data valid output window
tQH -tDQSQ
70.3
tQH -tDQSQ tQH - tDQSQ
22
21
21
tREFC
tREFI
tVTD
tXSNR
tXSRD
70.3
70.3
µs
µs
ns
ns
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to VDD
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
7.8
7.8
7.8
0
0
0
75
75
80
tCK
200
200
200
09005aef80a646bc
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
19
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