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MT16LSDF3264LHY-10E 参数 Datasheet PDF下载

MT16LSDF3264LHY-10E图片预览
型号: MT16LSDF3264LHY-10E
PDF下载: 下载PDF文件 查看货源
内容描述: [SMALL-OUTLINE SDRAM MODULE]
分类和应用: 动态存储器
文件页数/大小: 22 页 / 476 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256MB, 512MB (x64, DR)  
144-PIN SDRAM SODIMM  
Table 6:  
Pin Descriptions  
Pin numbers may not correlate with symbols; refer to the Pin Assignment tables on page 3 for more information  
PIN NUMBERS  
SYMBOL  
TYPE  
DESCRIPTION  
65, 66, 67  
RAS#, CAS#, WE#  
Input  
Command inputs: RAS#, CAS#, and WE# (along with S#) define  
the command being entered.  
61, 74  
62, 68  
CK0, CK1  
Input  
Input  
Clock: CK is driven by the system clock. All SDRAM input  
signals are sampled on the positive edge of CK. CK also  
increments the internal burst counter and controls the output  
registers.  
CKE0, CKE1  
Clock enable: CKE activates (HIGH) and deactivates (LOW) the  
CK signal. Deactivating the clock provides PRECHARGE power-  
down and SELF REFRESH operation (all device banks idle),  
ACTIVE power-down (row ACTIVE in any device bank), or  
CLOCK SUSPEND operation (burst access in progress). CKE is  
synchronous except after the device enters power-down and  
self refresh modes, where CKE becomes asynchronous until  
after exiting the same mode. The input buffers, including CK,  
are disabled during power-down and self refresh modes,  
providing low standby power.  
69, 71  
S0#,S1#  
Input  
Input  
Chip select: S# enables (registered LOW) and disables  
(registered HIGH) the command decoder. All commands are  
masked when S# is registered HIGH. S# is considered part of  
the command code.  
23, 24, 25, 26, 115, 116, 117, DQMB0–DQMB7  
118  
Input/output mask: DQMB is an input mask signal for write  
accesses and an output enable signal for read accesses. Input  
data is masked when DQMB is sampled HIGH during a WRITE  
cycle. The output buffers are placed in a High-Z state (two-  
clock latency) when DQMB is sampled HIGH during a READ  
cycle.  
106, 110  
BA0, BA1  
Input  
Input  
Bank address: BA0 and BA1 define to which device bank the  
ACTIVE, READ, WRITE, or PRECHARGE command is being  
applied.  
29, 30, 31, 32, 33, 34,  
70 (512MB), 103, 104, 105,  
109, 111, 112  
A0–A11  
(256MB)  
A0–A12  
(512MB)  
Address inputs: Provide the row address for ACTIVE commands  
and the column address and auto precharge bit (A10) for  
READ/WRITE commands, to select one location out of the  
memory array in the respective device bank. A10 sampled  
during a PRECHARGE command determines whether the  
PRECHARGE applies to one device bank (A10 LOW, device  
bank selected by BA0, BA1) or all device banks (A10 HIGH).  
The address inputs also provide the op-code during a MODE  
REGISTER SET command.  
142  
141  
SCL  
Input  
Serial clock for presence-detect: scl is used to synchronize the  
presence-detect data transfer to and from the module.  
SDA  
Input/  
Output  
Serial presence-detect data: sda is a bidirectional pin used to  
transfer addresses and data into and data out of the presence-  
detect portion of the module.  
3, 4, 5, 6, 7, 8, 9, 10, 13, 14, 15,  
16, 17, 18,19, 20, 37, 38, 39,  
40, 41, 42, 43, 44, 47, 48, 49,  
50, 51, 52, 53, 54, 83, 84, 85,  
86, 87, 88, 89, 90, 93, 94, 95,  
96, 97, 98, 99, 100, 121, 122,  
123, 124, 125, 126, 127, 128,  
131, 132, 133, 134, 135, 136,  
137, 138  
DQ0–DQ63  
Input/  
Output  
Data I/O: Data bus.  
pdf: 09005aef807924d2, source: 09005aef807924f1  
SDF16C32_64x64HG.fm - Rev. E 4/06 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
4
©2006 Micron Technology, Inc. All rights reserved.  
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