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MT16LSDF3264LHY-10E 参数 Datasheet PDF下载

MT16LSDF3264LHY-10E图片预览
型号: MT16LSDF3264LHY-10E
PDF下载: 下载PDF文件 查看货源
内容描述: [SMALL-OUTLINE SDRAM MODULE]
分类和应用: 动态存储器
文件页数/大小: 22 页 / 476 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256MB, 512MB (x64, DR)  
144-PIN SDRAM SODIMM  
Table 7:  
Burst Definition Table  
Figure 5: CL Diagram  
T0  
T1  
T2  
T3  
ORDER OF ACCESSES  
WITHIN A BURST  
CLK  
STARTING  
BURST COLUMN  
LENGTH ADDRESS  
TYPE =  
SEQUENTIAL  
TYPE =  
INTERLEAVED  
COMMAND  
READ  
NOP  
t
NOP  
t
LZ  
OH  
A0  
DOUT  
DQ  
t
AC  
2
0
1
0-1  
1-0  
0-1  
1-0  
CAS Latency = 2  
A1 A0  
0
0
1
1
0
1
0
1
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
4
T0  
T1  
T2  
T3  
T4  
CLK  
COMMAND  
READ  
NOP  
NOP  
NOP  
t
A2 A1 A0  
t
LZ  
OH  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
D
OUT  
DQ  
t
AC  
CAS Latency = 3  
8
DON’T CARE  
UNDEFINED  
Burst Type  
Accesses within a given burst may be programmed  
to be either sequential or interleaved; this is referred to  
as the burst type and is selected via bit M3.  
Full  
Page  
(y)  
n = A0-A9 Cn, Cn + 1, Cn + 2 Not supported  
(location  
0-y)  
Cn + 3, Cn + 4...  
…Cn - 1, Cn…  
The ordering of accesses within a burst is deter-  
mined by the burst length, the burst type, and the  
starting column address, as shown in Table 7.  
NOTE:  
1. For full-page accesses: y = 1,024 (both 256MB and  
512MB modules)  
2. For a burst length of two, A1–A9 select the block-of-  
two burst; A0 selects the starting column within the  
block.  
3. For a burst length of four, A2–A9 select the block-of-  
four burst; A0–A1 select the starting column within the  
block.  
4. For a burst length of eight, A3–A9 select the block-of-  
eight burst; A0–A2 select the starting column within  
the block.  
5. For a full-page burst, the full row is selected and A0–A9  
select the starting column.  
6. Whenever a boundary of the block is reached within a  
given sequence above, the following access wraps  
within the block.  
7. For a burst length of one, A0–A9 select the unique col-  
umn to be accessed, and mode register bit M3 is  
ignored.  
CAS Latency (CL)  
CL is the delay, in clock cycles, between the registra-  
tion of a READ command and the availability of the  
first piece of output data. The latency can be set to two  
or three clocks.  
If a READ command is registered at clock edge n,  
and the latency is m clocks, the data will be available  
by clock edge n + m. The DQ will start driving as a  
result of the clock edge one cycle earlier (n + m - 1),  
and provided that the relevant access times are met,  
the data will be valid by clock edge n + m. For example,  
assuming that the clock cycle time is such that all rele-  
vant access times are met, if a READ command is regis-  
tered at T0 and the latency is programmed to two  
clocks, the DQ will start driving after T1 and the data  
will be valid by T2, as shown in Figure 4 on page 8.  
Table 8 on page 10 indicates the operating frequencies  
at which each CL setting can be used.  
Reserved states should not be used as unknown  
operation or incompatibility with future versions may  
result.  
pdf: 09005aef807924d2, source: 09005aef807924f1  
SDF16C32_64x64HG.fm - Rev. E 4/06 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2006 Micron Technology, Inc. All rights reserved.  
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