8, 16, 32 MEG x 64
NONBUFFERED DRAM DIMMs
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Pin Relative to V
SS
........ -1V to +4.6V
Voltage on Inputs or I/O Pins
Relative to V
SS
................................. -1V to +4.6V
Operating Temperature, T
A
(ambient) .. 0°C to +70°C
Storage Temperature (plastic) ........... -55°C to +125°C
Power Dissipation ................................................... 8W
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1) (V
DD
= +3.3V ±0.3V)
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT
Any input 0V
≤
V
IN
≤
V
DD
+ 0.3V
(All other pins not under test = 0V)
CAS0#-CAS7#
SYMBOL
V
DD
V
IH
V
IL
I
I
1
SIZE
ALL
ALL
ALL
64MB
128MB
256MB
64MB
128MB
256MB
64MB
128MB
256MB
64MB
128MB
256MB
64MB
128MB
256MB
ALL
ALL
MIN
3
2
-0.5
-2
-4
-8
-16
-32
-64
-8
-16
-32
-8
-16
-16
-5
-5
-10
2.4
–
MAX
3.6
V
DD
+ 0.3
0.8
2
4
8
16
32
64
8
16
32
8
16
16
5
5
10
–
0.4
UNITS NOTES
V
V
V
µA
30
30
A0-A11
I
I
2
µA
WE0#, WE2#,
OE0#, OE2#
RAS0#-RAS3#
OUTPUT LEAKAGE CURRENT:
DQ is disabled; 0V
≤
V
OUT
≤
V
DD
+ 0.3V
OUTPUT LEVELS:
Output High Voltage (I
OUT
= -2mA)
Output Low Voltage (I
OUT
= 2mA)
I
I
3
µA
I
I
4
µA
DQ0-DQ63
I
OZ
V
OH
V
OL
µA
V
V
8, 16, 32 Meg x 64 Nonbuffered DRAM DIMMs
DM78.p65 – Rev. 2/99
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999, Micron Technology, Inc.
MICRON [ MICRON TECHNOLOGY ]
