8, 16, 32 MEG x 64
NONBUFFERED DRAM DIMMs
EDO PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 12, 29) (VDD = +3.3V 0.3V)
ACCHARACTERISTICS
-5
-6
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
t
Refresh period (4,096 cycles)
RAS#prechargetime
RAS# to CAS# precharge time
READcommandholdtime(referencedtoRAS#)
RAS# hold time
REF
RP
64
64
t
30
5
0
13
116
67
13
2
40
5
0
t
RPC
t
RRH
18
23
t
RSH
15
140
79
15
2
10
45
0
t
READ-WRITEcycletime
RAS# to WE# delay time
RWC
t
RWD
RWL
t
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITEcommandholdtime
WRITEcommand hold time (referenced to RAS#)
WE# command setup time
Output disable delay from WE# (CAS# HIGH)
WRITEcommandpulsewidth
WE# pulse width for output
disablewhenCAS#HIGH
t
T
50
12
50
15
t
WCH
WCR
WCS
8
38
0
t
t
t
WHZ
t
WP
5
10
5
10
t
WPZ
t
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
WRH
WRP
8
8
10
10
ns
ns
t
8, 16, 32 Meg x 64 Nonbuffered DRAM DIMMs
DM78.p65 – Rev. 2/99
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
©1999,MicronTechnology,Inc.
12
MICRON [ MICRON TECHNOLOGY ]
