4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM
IDD Specifications
Table 16: DDR3 IDD Specifications and Conditions – 8GB (Die Revision N)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 4Gb (512 Meg x
8) component data sheet
Parameter
Symbol
1866
456
576
128
256
416
416
304
448
512
904
904
1504
192
256
1184
160
1600
440
552
128
224
384
384
288
416
480
824
824
1464
192
256
1104
160
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
IDD0
1
IDD1
2
IDD2P0
2
IDD2P1
2
IDD2Q
2
IDD2N
1
Precharge standby ODT current
IDD2NT
2
Active power-down current
IDD3P
2
Active standby current
IDD3N
1
Burst read operating current
IDD4R
1
Burst write operating current
IDD4W
1
Refresh current
IDD5B
2
Self refresh temperature current: MAX TC = 85°C
Self refresh temperature current (SRT-enabled): MAX TC = 95°C
All banks interleaved read current
Reset current
IDD6
2
IDD6ET
1
IDD7
2
IDD8
1. One module rank in the active IDD; the other rank in IDD2P0 (slow exit).
2. All ranks in this IDD condition.
Notes:
PDF: 09005aef846206a0
ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
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