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M58BW016FB 参数 Datasheet PDF下载

M58BW016FB图片预览
型号: M58BW016FB
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 512千位×32 ,引导块,爆) [16 Mbit (512 Kbit x 32, boot block, burst)]
分类和应用:
文件页数/大小: 70 页 / 1283 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB  
Signal descriptions  
2.5  
Output Disable (GD)  
The Output Disable, GD, deactivates the data output buffers. When Output Disable, GD, is  
at VIH, the outputs are driven by the Output Enable. When Output Disable, GD, is at VIL, the  
outputs are high impedance independently of Output Enable. The Output Disable pin must  
be connected to an external pull-up resistor as there is no internal pull-up resistor to drive  
the pin.  
2.6  
2.7  
Write Enable (W)  
The Write Enable, W, input controls writing to the command interface, Address inputs and  
Data latches. Both addresses and data can be latched on the rising edge of Write Enable  
(also see Latch Enable, L).  
Reset/Power-down (RP)  
The Reset/Power-down, RP, is used to apply a hardware reset to the memory. A hardware  
reset is achieved by holding Reset/Power-down Low, VIL, for at least tPLPH. Writing is  
inhibited to protect data, the command interface and the program/erase controller are reset.  
The status register information is cleared and power consumption is reduced to deep  
power-down level. The device acts as deselected, that is the data outputs are high  
impedance.  
After Reset/Power-down goes High, VIH, the memory will be ready for bus read operations  
after a delay of tPHEL or bus write operations after tPHWL  
.
If Reset/Power-down goes Low, VIL, during a Block Erase, or a Program the operation is  
aborted, in a time of tPLRH maximum, and data is altered and may be corrupted.  
During power-up power should be applied simultaneously to VDD and VDDQ(IN) with RP held  
at VIL. When the supplies are stable RP is taken to VIH. Output Enable, G, Chip Enable, E,  
and Write Enable, W, should be held at VIH during power-up.  
In an application, it is recommended to associate reset/power-down pin, RP, with the reset  
signal of the microprocessor. Otherwise, if a reset operation occurs while the memory is  
performing an erase or program operation, the memory may output the status register  
information instead of being initialized to the default asynchronous random read.  
See Table 22: Reset, power-down and power-up AC characteristics and Figure 17: Reset,  
power-down and power-up AC waveforms - control pins low, for more details.  
2.8  
Latch Enable (L)  
The bus interface can be configured to latch the address inputs on the rising edge of Latch  
Enable, L, for asynchronous latch enable controlled read or write or synchronous burst read  
operations. In synchronous burst read operations the address is latched on the active edge  
of the Clock when Latch Enable is Low, VIL. Once latched, the addresses may change  
without affecting the address used by the memory. When Latch Enable is Low, VIL, the latch  
is transparent. Latch Enable, L, can remain at VIL for asynchronous random read and write  
operations.  
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