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M29W256GL 参数 Datasheet PDF下载

M29W256GL图片预览
型号: M29W256GL
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 89 页 / 1158 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号M29W256GL的Datasheet PDF文件第81页浏览型号M29W256GL的Datasheet PDF文件第82页浏览型号M29W256GL的Datasheet PDF文件第83页浏览型号M29W256GL的Datasheet PDF文件第84页浏览型号M29W256GL的Datasheet PDF文件第86页浏览型号M29W256GL的Datasheet PDF文件第87页浏览型号M29W256GL的Datasheet PDF文件第88页浏览型号M29W256GL的Datasheet PDF文件第89页  
256Mb: 3V Embedded Parallel NOR Flash  
Program/Erase Characteristics  
Program/Erase Characteristics  
Table 32: Program/Erase Characteristics  
Notes 1 and 2 apply to the entire table  
Parameter  
Min  
Typ  
145  
125  
Max  
400  
Unit  
Notes  
3, 4  
4
Chip erase  
Chip erase  
s
s
VPP/WP# =  
VPPH  
400  
Block erase (128KB)  
0.5  
25  
2
45  
s
4, 5  
Erase suspend latency time  
Block erase timeout  
µs  
µs  
µs  
µs  
50  
Byte program  
Single-byte program  
16  
50  
200  
200  
4
4
Write to buffer program  
(64 bytes at-a-time)  
VPP/WP# =  
VPPH  
VPP/WP# =  
VIH  
70  
200  
µs  
4
Word program  
Single-word program  
16  
50  
200  
200  
µs  
µs  
4
4
Write to buffer program  
(32 bytes at-a-time)  
VPP/WP# =  
VPPH  
VPP/WP# =  
VIH  
70  
200  
µs  
4
Chip program (byte by byte)  
540  
270  
25  
13  
15  
10  
5
800  
400  
200  
50  
60  
40  
15  
s
4
4
Chip program (word by word)  
Chip program (write to buffer program)  
s
s
4, 6  
4, 6  
6
Chip program (write to buffer program with VPP/WP# = VPPH  
)
s
s
Chip program (enhanced buffered program)  
Chip program (enhanced buffered program with VPP/WP# = VPP)  
Program suspend latency time  
s
6
µs  
PROGRAM/ERASE cycles (per block)  
Data retention  
100,000  
20  
cycles  
years  
1. Typical values measured at room temperature and nominal voltages and for not cycled  
devices.  
Notes:  
2. Typical and maximum values are sampled, but not 100% tested.  
3. Time needed to program the whole array at 0 is included.  
4. Maximum value measured at worst case conditions for both temperature and VCC after  
100,000 PROGRAM/ERASE cycles.  
5. Block erase polling cycle time (see Data polling AC waveforms figure).  
6. Intrinsic program timing, that means without the time required to execute the bus cy-  
cles to load the PROGRAM commands.  
PDF: 09005aef84bd3b68  
m29w_256mb.pdf - Rev. B 5/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
85  
© 2013 Micron Technology, Inc. All rights reserved.