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M29W256GL 参数 Datasheet PDF下载

M29W256GL图片预览
型号: M29W256GL
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 89 页 / 1158 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Program Operations  
Figure 24: ENHANCED BUFFERED PROGRAM Flowchart  
Start  
Enhanced Buffered  
Program command,  
block address  
First cycle of the  
Enhanced Buffered Program  
command  
Enhanced  
Buffered Program  
command set  
Write buffer data,  
start address (00),  
X=255  
Read DQ6 at  
valid address  
Yes  
Yes  
Read  
DQ5 & DQ6  
at valid address  
X = 0  
No  
Write to a different  
block address  
Abort Write  
to buffer  
=
DQ6  
No  
toggle  
No  
Yes  
Enhanced Buffered  
Program aborted  
Write next data, (2)  
program address pair  
(1)  
No  
=1  
DQ5  
Yes  
Write next data, (2)  
Read DQ6  
twice  
program address pair  
at valid address  
X = X-1  
No  
DQ6 =  
toggle  
Enhanced Buffered  
Program Confirm,  
block address  
258 th write cycle of the  
Enhanced Buffered Program  
command  
Yes  
Fail  
Read Status Register  
(DQ1, DQ5, DQ7) at  
last loaded address  
Yes  
DQ7 = Data  
No  
No  
No  
DQ5 = 1  
Yes  
DQ1 = 1  
Yes  
Check Status Register  
(DQ5, DQ7) at  
last loaded address  
Yes  
New  
Program?  
No  
Yes  
Exit Enhanced  
Buffered Program  
command set  
DQ7 = Data  
(3)  
No  
(4)  
Fail or Abort  
End  
PDF: 09005aef84bd3b68  
m29w_256mb.pdf - Rev. B 5/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
47  
© 2013 Micron Technology, Inc. All rights reserved.