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M29W256GL 参数 Datasheet PDF下载

M29W256GL图片预览
型号: M29W256GL
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 89 页 / 1158 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Program Operations  
tions or the incorrect sequence of bus WRITE cycles will abort the WRITE TO BUFFER  
PROGRAM command.  
The status register bits DQ1, DQ5, DQ6, DQ7 can be used to monitor the device status  
during a WRITE TO BUFFER PROGRAM operation.  
An external 12V supply can be used to improve programming efficiency.  
When reprogramming data in a portion of memory already programmed (changing  
programmed data from '0' to '1') operation failure can be detected by a logical OR be-  
tween the previous and the current value.  
PDF: 09005aef84bd3b68  
m29w_256mb.pdf - Rev. B 5/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.  
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