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M29W256GL 参数 Datasheet PDF下载

M29W256GL图片预览
型号: M29W256GL
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 89 页 / 1158 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号M29W256GL的Datasheet PDF文件第31页浏览型号M29W256GL的Datasheet PDF文件第32页浏览型号M29W256GL的Datasheet PDF文件第33页浏览型号M29W256GL的Datasheet PDF文件第34页浏览型号M29W256GL的Datasheet PDF文件第36页浏览型号M29W256GL的Datasheet PDF文件第37页浏览型号M29W256GL的Datasheet PDF文件第38页浏览型号M29W256GL的Datasheet PDF文件第39页  
256Mb: 3V Embedded Parallel NOR Flash  
Standard Command Definitions – Address-Data Cycles  
Table 9: Standard Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit (Continued)  
Note 1 applies to entire table  
Address and Data Cycles  
1st  
2nd  
3rd  
4th  
5th  
6th  
Command and  
Code/Subcode  
Bus  
Size  
A
D
A
D
A
D
A
D
A
D
A
D
Notes  
EXIT ENHANCED  
BUFFERED  
PROGRAM (90h)  
x8  
NA  
NA  
x16  
X
90  
X
00  
ENHANCED  
x8  
BUFFERED  
PROGRAM ABORT (F0h)  
x16  
555  
X
AA 2AA  
B0  
55  
555  
F0  
PROGRAM SUSPEND  
(B0h)  
x8  
x16  
x8  
PROGRAM RESUME  
(30h)  
X
30  
x16  
ERASE Operations  
CHIP ERASE (80/10h)  
x8  
x16  
x8  
AAA AA  
555  
555  
2AA  
X
55  
10  
55  
30  
AAA  
555  
80 AAA AA  
555  
555  
55  
55  
AAA  
555  
10  
30  
2AA  
UNLOCK BYPASS  
CHIP ERASE (80/10h)  
X
80  
5
10  
5
x16  
x8  
BLOCK ERASE (80/30h)  
AAA AA  
555  
555  
2AA  
BAd  
AAA  
555  
80 AAA AA  
555  
555  
BAd  
x16  
x8  
2AA  
UNLOCK BYPASS  
BLOCK ERASE (80/30h)  
X
X
X
80  
B0  
30  
x16  
x8  
ERASE SUSPEND (B0h)  
x16  
x8  
ERASE RESUME (30h)  
x16  
1. A = Address; D = Data; X = "Don't Care;" BAd = Any address in the block; N = Number of  
bytes to be programmed; PA = Program address; PD = Program data; Gray shading = Not  
applicable. All values in the table are hexadecimal. Some commands require both a com-  
mand code and subcode.  
Notes:  
2. These cells represent READ cycles (versus WRITE cycles for the others).  
3. AUTO SELECT enables the device to read the manufacturer code, device code, block pro-  
tection status, and extended memory block protection indicator.  
4. AUTO SELECT addresses and data are specified in the Electronic Signature table and the  
Extended Memory Block Protection table.  
5. For any UNLOCK BYPASS ERASE/PROGRAM command, the first two UNLOCK cycles are  
unnecessary.  
6. BAd must be the same as the address loaded during the WRITE TO BUFFER PROGRAM  
3rd and 4th cycles.  
7. WRITE TO BUFFER PROGRAM operation: maximum cycles = 68(x8) and 36 (x16). UNLOCK  
BYPASS WRITE TO BUFFER PROGRAM operation: maximum cycles = 66 (x8), 34 (x16).  
WRITE TO BUFFER PROGRAM operation: N + 1 = bytes to be programmed; maximum  
buffer size = 64 bytes (x8) and 32 words (x16).  
PDF: 09005aef84bd3b68  
m29w_256mb.pdf - Rev. B 5/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
35  
© 2013 Micron Technology, Inc. All rights reserved.  
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