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M29W256GH70N3E 参数 Datasheet PDF下载

M29W256GH70N3E图片预览
型号: M29W256GH70N3E
PDF下载: 下载PDF文件 查看货源
内容描述: [Parallel NOR Flash Embedded Memory]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 76 页 / 992 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Accelerated Program, Data Polling/Toggle AC Characteristics  
Figure 26: Data Polling AC Timing  
t
t
t
t
CH  
CE  
HZ/ DF  
CE#  
OE#  
t
t
OPH  
OE  
t
OEH  
WE#  
DQ7  
Valid DQ7  
Data  
Data  
DQ7#  
DQ7#  
Valid  
DQ[6:0] Data  
DQ[6:0] Data  
Output flag  
Output flag  
t
BUSY  
RY/BY#  
1. DQ7 returns a valid data bit when the PROGRAM or ERASE command has completed.  
Notes:  
2. See the following tables for timing details: Read AC Characteristics, Accelerated Pro-  
gram and Data Polling/Data Toggle AC Characteristics.  
Figure 27: Toggle/Alternative Toggle Bit Polling AC Timing (8-Bit Mode)  
A[MAX:0]/  
A–1  
t
t
AHT  
ASO  
CE#  
WE#  
OE#  
t
t
t
OEH  
AHT  
ASO  
t
t
t
OPH  
EPH  
OPH  
t
t
t
DH  
Data  
OE  
CE  
Stop  
toggling  
Output  
Valid  
DQ6/DQ2  
RY/BY#  
Toggle  
Toggle  
Toggle  
t
BUSY  
1. DQ6 stops toggling when the PROGRAM or ERASE command has completed. DQ2 stops  
toggling when the CHIP ERASE or BLOCK ERASE command has completed.  
Notes:  
2. See the following tables for timing details: Read AC Characteristics, Accelerated Pro-  
gram and Data Polling/Data Toggle AC Characteristics.  
PDF: 09005aef84bd3b68  
m29w_256mb.pdf - Rev. C 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
71  
© 2013 Micron Technology, Inc. All rights reserved.  
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