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M29W256GH70N3E 参数 Datasheet PDF下载

M29W256GH70N3E图片预览
型号: M29W256GH70N3E
PDF下载: 下载PDF文件 查看货源
内容描述: [Parallel NOR Flash Embedded Memory]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 76 页 / 992 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Absolute Ratings and Operating Conditions  
Absolute Ratings and Operating Conditions  
Stresses greater than those listed may cause permanent damage to the device. This is a  
stress rating only, and functional operation of the device at these or any other condi-  
tions outside those indicated in the operational sections of this specification is not im-  
plied. Exposure to absolute maximum rating conditions for extended periods may ad-  
versely affect reliability.  
Table 23: Absolute Maximum/Minimum Ratings  
Parameter  
Symbol  
TBIAS  
TSTG  
VIO  
Min  
–50  
Max  
125  
Unit  
°C  
°C  
V
Notes  
Temperature under bias  
Storage temperature  
I/O voltage  
–65  
150  
–0.6  
–0.6  
–0.6  
–0.6  
–0.6  
VCC + 0.6  
4
1, 2  
Supply voltage  
VCC  
V
I/O supply voltage  
Identification voltage  
Program voltage  
VCCQ  
VID  
4
V
13.5  
13.5  
V
VPPH  
V
3
1. During signal transitions, minimum voltage may undershoot to −2V for periods less than  
20ns.  
Notes:  
2. During signal transitions, maximum voltage may overshoot to VCC + 2V for periods less  
than 20ns.  
3. VPPH must not remain at 12V for more than 80 hours cumulative.  
Table 24: Operating Conditions  
Note 1 applies to entire table  
Parameter  
Symbol  
Min  
2.7  
1.65  
0
Max  
3.6  
Unit  
V
Notes  
Supply voltage  
VCC  
VCCQ  
TA  
TA  
CL  
Input/output supply voltage (VCCQ VCC  
)
3.6  
V
2
Ambient operating temperature (range 1)  
Ambient operating temperature (range 6)  
Load capacitance  
70  
°C  
°C  
pF  
ns  
V
–40  
125  
30  
Input rise and fall times  
10  
Input pulse voltages  
0 to VCCQ  
VCCQ/2  
Input and output timing reference voltages  
V
1. Specifications apply to 60, 70, and 80ns devices unless otherwise noted. The 60ns device  
is available upon customer request.  
Notes:  
2. For the 80ns device, I/O supply voltage (VCCQ VCC) = 1.65V (MIN) and 3.6V (MAX). For  
the 60ns and 70ns devices, I/O supply voltage (VCCQ VCC) = 2.7V (MIN) and 3.6V (MAX).  
PDF: 09005aef84bd3b68  
m29w_256mb.pdf - Rev. C 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
56  
© 2013 Micron Technology, Inc. All rights reserved.  
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