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M29W128GH 参数 Datasheet PDF下载

M29W128GH图片预览
型号: M29W128GH
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 76 页 / 841 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb 3V Embedded Parallel NOR Flash  
Common Flash Interface  
Table 17: CFI Query System Interface Information  
Note 1 applies to the entire table  
Address  
x16  
x8  
Data  
Description  
Value  
1Bh  
36h  
0027h  
VCC logic supply minimum program/erase voltage  
Bits[7:4] BCD value in volts  
2.7V  
Bits[3:0] BCD value in 100mV  
1Ch  
1Dh  
1Eh  
38h  
3Ah  
3Ch  
0036h  
00B5h  
00C5h  
VCC logic supply maximum program/erase voltage  
Bits[7:4] BCD value in volts  
Bits[3:0] BCD value in 100mV  
3.6V  
VPPH (programming) supply minimum program/erase voltage  
Bits[7:4] hex value in volts  
Bits[3:0] BCD value in 100mV  
11.5V  
12.5V  
VPPH (programming) supply maximum program/erase voltage  
Bits[7:4] hex value in volts  
Bits[3:0] BCD value in 100mV  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
3Eh  
40h  
42h  
44h  
46h  
48h  
4Ah  
4Ch  
0004h  
0004h  
0009h  
0010h  
0004h  
0004h  
0003h  
0004h  
Typical timeout for single byte/word program = 2nμs  
Typical timeout for maximum size buffer program = 2nμs  
Typical timeout per individual block erase = 2nms  
Typical timeout for full chip erase = 2nms  
Maximum timeout for byte/word program = 2n times typical  
Maximum timeout for buffer program = 2n times typical  
Maximum timeout per individual block erase = 2n times typical  
Maximum timeout for chip erase = 2n times typical  
16µs  
16µs  
0.5s  
40s  
200µs  
200µs  
2.3s  
400s  
1. The values in this table are valid for both packages.  
Note:  
Table 18: Device Geometry Definition  
Address  
x16  
x8  
Data  
Description  
Value  
27h  
4Eh  
0018h  
Device size = 2n in number of bytes  
16MB  
28h  
29h  
50h  
52h  
0002h  
0000h  
Flash device interface code description  
x8, x16  
asynchronous  
2Ah  
2Bh  
54h  
56h  
0006h  
0000h  
Maximum number of bytes in multi-byte program or page =  
2n  
64B  
1
2Ch  
58h  
0001h  
Number of erase block regions. It specifies the number of  
regions containing contiguous erase blocks of the same size.  
2Dh  
2Eh  
5Ah  
5Ch  
007Fh  
0000h  
Erase block region 1 information  
Number of identical-size erase blocks = 007Fh + 1  
128 block  
128KB  
2Fh  
30h  
5Eh  
60h  
0000h  
0002h  
Erase block region 1 information  
Block size in region 1 = 0200h × 256 bytes  
PDF: 09005aef84daa141  
m29w_128mb.pdf - Rev. A 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.