128Mb 3V Embedded Parallel NOR Flash
Features
Part Numbering Information
Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory
content bits erased to 1. For available options, such as packages or high/low protection, or for further information,
contact your Micron sales representative. Part numbers can be verified at
Feature and specifica-
tion comparison by device type is available at
Contact the factory for devices not
found.
Table 1: Part Number Information
Part Number
Category
Device type
Operating voltage
Device function
Category Details
M29
W = V
CC
= 2.7– 3.6V
128GH = 128Mb (x8/x16) page, uniform block Flash memory, highest block protected by
V
PP
/WP#
128GL = 128Mb (x8/x16) page, uniform block Flash memory, lowest block protected by
V
PP
/WP#
Speed
70 = 70ns
60 = 60ns
7A = 70ns
Package
N = 56-pin TSOP, 14mm x 20mm
ZA = 64-ball TBGA, 10mm x 13mm, 1mm pitch
ZS = 64-ball Fortified BGA, 11mm x 13mm, 1mm pitch
Temperature range
1 = 0 to 70°C
6 = –40°C to +85°C (IT)
3 = –40°C to +125°C (IT)
Shipping options
E = RoHS-compliant package, standard packing
F = RoHS-compliant package, tape and reel packing
Notes:
1. 80ns if V
CCQ
= 1.65V to V
CC
.
2. The 60ns device is available upon customer request.
3. Automotive qualified, available only with option 6. Qualified and characterized according to AEC Q100 and
Q003 or equivalent; advanced screening according to AEC Q001 and Q002 or equivalent.
Notes
PDF: 09005aef84daa141
m29w_128mb.pdf - Rev. A 7/13 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
