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M29W128GH 参数 Datasheet PDF下载

M29W128GH图片预览
型号: M29W128GH
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 76 页 / 841 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb 3V Embedded Parallel NOR Flash  
General Description  
General Description  
The M29W is an asynchronous, uniform block, parallel NOR Flash memory device man-  
ufactured on 90nm single-level cell (SLC) technology. READ, ERASE, and PROGRAM op-  
erations are performed using a single low-voltage supply. Upon power-up, the device  
defaults to read array mode.  
The main memory array is divided into uniform blocks that can be erased independent-  
ly so that valid data can be preserved while old data is purged. PROGRAM and ERASE  
commands are written to the command interface of the memory. An on-chip program/  
erase controller simplifies the process of programming or erasing the memory by taking  
care of all special operations required to update the memory contents. The end of a  
PROGRAM or ERASE operation can be detected and any error condition can be identi-  
fied. The command set required to control the device is consistent with JEDEC stand-  
ards.  
CE#, OE#, and WE# control the bus operation of the device and enable a simple con-  
nection to most microprocessors, often without additional logic.  
The M29W supports asynchronous random read and page read from all blocks of the  
array. It features a write to buffer program capability that improves throughput by pro-  
gramming a buffer of 32 words in one command sequence. Also, in x16 mode, the en-  
hanced buffered program capability improves throughput by programming 256 words  
in one command sequence. The device VPP/WP# signal enables faster programming.  
The device contains a 128-word (x16) and 256-byte (x8) extended memory block. The  
user can program this additional space and then protect it to permanently secure the  
contents. The device also features different levels of hardware and software protection  
to secure blocks from unwanted modification.  
Figure 1: 128 Logic Diagram  
VCC  
VCCQ  
VPP/WP#  
15  
A[22:0]  
DQ[14:0]  
DQ15/A-1  
WE#  
CE#  
OE#  
RST#  
RY/BY#  
BYTE#  
VSS  
PDF: 09005aef84daa141  
m29w_128mb.pdf - Rev. A 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.  
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