256Mb: 3V Embedded Parallel NOR Flash
Description
Description
The M29DW256G is a 256Mb (16Mb x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be performed using a single low voltage (2.7
to 3.6 V) supply. At power-up the memory defaults to its read mode.
The M29DW256G features an asymmetrical block architecture, with 8 parameter and
126 main blocks, divided into four banks, A, B, C and D, providing multiple bank opera-
tions. While programming or erasing in one bank, read operations are possible in any
other bank. Four of the parameter blocks are at the top of the memory address space,
and four are at the bottom.
Program and erase commands are written to the command interface of the memory. An
on-chip program/erase controller simplifies the process of programming or erasing the
memory by taking care of all of the special operations that are required to update the
memory contents. The end of a program or erase operation can be detected and any er-
ror conditions identified. The command set required to control the memory is consis-
tent with JEDEC standards.
Chip Enable, Output Enable and Write Enable signals control the bus operations of the
memory. They allow simple connection to most microprocessors, often without addi-
tional logic.
The device supports asynchronous random read and page read from all blocks of the
memory array. The device also features a write to buffer program capability that im-
proves the programming throughput by programming 32 words in one instance. The
enhanced buffered program feature is also available to speed up programming through-
put, allowing 256 words to be programmed at once. The VPP/WP# signal can be used to
enable faster programming of the device.
The M29DW256G has one extra 256-word extended block that can be accessed using a
dedicated command: 128-Word factory locked and 128-Word customer lockable. The
extended block can be protected and so is useful for storing security information. How-
ever the protection is irreversible; once protected the protection cannot be undone.
The device features different levels of hardware and software block protection to avoid
unwanted program or erase (modify):
• Hardware protection: VPP/WP# provides hardware protection on four outermost pa-
rameter blocks (two at the top and two at the bottom of the address space)
• Software protection: Volatile protection, nonvolatile protection, password protection
The memory is offered in TSOP56 (14mm x 20mm), TBGA64 (10mm x 13mm, 1mm
pitch), and FBGA (11mm x 13mm) packages. The memory is delivered with all the bits
erased (set to ‘1’).
PDF: 09005aef84ecabef
m29dw_256g.pdf - Rev. A 10/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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