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M29DW256G7ANF6F 参数 Datasheet PDF下载

M29DW256G7ANF6F图片预览
型号: M29DW256G7ANF6F
PDF下载: 下载PDF文件 查看货源
内容描述: [Micron Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 78 页 / 1023 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Power-Up and Reset Characteristics  
Table 29: Reset AC Specifications  
Note 1 applies to the entire table  
Symbol  
Condition/Parameter  
Legacy  
tREADY  
tRP  
JEDEC  
tPLRH  
tPLPH  
tPHEL,  
tPHGL,  
tPHWL  
Min  
Max  
55  
Unit  
µs  
Notes  
RST# LOW to read mode during program or erase  
RST# pulse width  
2
20  
55  
µs  
RST# HIGH to CE# LOW, OE# LOW  
tRH  
ns  
2
RST# LOW to standby mode during read mode  
RST# LOW to standby mode during program or erase  
RY/BY# HIGH to CE# LOW, OE# LOW  
tRPD  
tRB  
20  
55  
0
µs  
µs  
ns  
tRHEL,  
tRHGL,  
tRHWL  
2
1. Specifications apply to 70 and 80ns devices unless otherwise noted.  
2. Sampled only; not 100% tested.  
Notes:  
Figure 14: Reset AC Timing – No PROGRAM/ERASE Operation in Progress  
RY/BY#  
CE#, OE#, WE#  
t
RH  
RST#  
t
RP  
Figure 15: Reset AC Timing During PROGRAM/ERASE Operation  
tREADY  
RY/BY#  
tRB  
CE#, OE#, WE#  
tRH  
RST#  
tRP  
PDF: 09005aef84ecabef  
m29dw_256g.pdf - Rev. A 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
62  
© 2012 Micron Technology, Inc. All rights reserved.  
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