256Mb: 3V Embedded Parallel NOR Flash
Common Flash Interface
Table 24: CFI Query System Interface Information
Note applies to the entire table.
Address
x16
Data
Description
Value
1Bh
0027h
VCC logic supply minimum program/erase voltage bit 7 to 4 BCD
value in volts bit 3 to 0 BCD value in 100 mV
2.7 V
3.6 V
8.5 V
9.5 V
1Ch
1Dh
1Eh
0036h
0085h
0095h
VCC logic supply maximum program/erase voltage bit 7 to 4 BCD
value in volts bit 3 to 0 BCD value in 100 mV
VPPH [programming] supply minimum program/erase voltage bit
7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV
VPPH [programming] supply maximum program/erase voltage bit
7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV
1Fh
20h
21h
22h
23h
24h
25h
26h
0004h
0004h
0009h
0011h
0004h
0004h
0003h
0004h
Typical timeout for single word program = 2n µs
16 µs
16 µs
0.5 s
Typical timeout for minimum size write buffer program = 2n µs
Typical timeout for individual block erase = 2n ms
Typical timeout for full chip erase = 2n ms
Maximum timeout for word program = 2n times typical
Maximum timeout for write buffer program = 2n times typical
Maximum timeout per individual block erase = 2n times typical
Maximum timeout for chip erase = 2n times typical
80 s
200 µs
200 µs
2.3 s
800 s
1. The values given in the above table are valid for both packages.
Note:
Table 25: Device Geometry Definition
Address
x16
27h
Data
Description
Device size = 2n in number of bytes
Value
0019h
32 Mbytes
x16 async.
64
28h 29h
2Ah 2Bh
0001h 0000h
0006h 0000h
Flash device interface code description
Maximum number of bytes in multiple-byte program or
page= 2n
2Ch
0003h
Number of Erase block regions. It specifies the number of
regions containing contiguous Erase blocks of the same
size.
3
2Dh 2Eh
2Fh
30h
0003h 0000h
0000h
Erase block region 1 information
2Dh-2Eh: number of erase blocks of identical size
2Fh-30h: block size (n*256 bytes)
4 blocks,
32-Kwords
0001h
31h 32h 33h
34h
007Dh 0000h 0000h
0004h
Erase block region 2 information
Erase block region 3 information
Erase block region 4 information
126 blocks,
128-Kwords
35h 36h 37h
38h
0003h 0000h 0000h
0001h
4 blocks,
32-Kwords
39h 3Ah 3Bh
3Ch
0000h 0000h 0000h
0000h
NA
PDF: 09005aef84ecabef
m29dw_256g.pdf - Rev. A 10/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
59
© 2012 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
