256Mb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 20: WE#-Controlled Program AC Timing
3rd Cycle 4th Cycle
Data Polling
PA
READ Cycle
t
t
WC
WC
555h
t
PA
A[MAX:0]
CE#
t
AS
AH
t
t
CH
t
E
CS
t
t
GHWL
OE
OE#
t
t
WP
WPH
WE#
t
t
t
WHWH1
DF
OH
t
DS
DQ[15:0]
AOh
DH
PD
DQ7#
D
D
OUT
OUT
t
1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-
GRAM command is followed by checking of the status register data polling bit and by a
READ operation that outputs the data (DOUT) programmed by the previous PROGRAM
command.
Notes:
2. PA is the address of the memory location to be programmed. PD is the data to be pro-
grammed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit
[DQ7]).
4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
PDF: 09005aef84ecabef
m29dw_256g.pdf - Rev. A 10/12 EN
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