M25PX16 Serial Flash Embedded Memory
Electrical Characteristics
Electrical Characteristics
Table 15: Power Up Timing Specifications
Symbol
tVSL
tPUW
Parameter
Min
30
Max
–
Units
µs
VCC[MIN] to S# LOW
Time delay to WRITE command
Write Inhibit voltage
1
10
ms
V
VWI
1.5
2.1
1. These parameters are characterized only.
Note:
Table 16: DC Current Specifications
Device Grade 6 Device Grade 3
Symbol
ILI
Parameter
Test Condition
Min
Max
±2
Min
Max
±2
Units
Input leakage current
Output leakage current
Standby current
–
–
–
–
–
–
–
–
–
–
–
µA
µA
µA
µA
mA
ILO
–
±2
±2
ICC1
S# = VCC, VIN = VSS or VCC
S# = VCC, VIN = VSS or VCC
50
100
100
12
ICC2
Deep power-down current
Operating current (READ)
10
ICC3
C = 0.1VCC / 0.9VCC at 75MHz,
DQ1 = open
12
C = 0.1VCC / 0.9VCC at 33MHz,
DQ1 = open
–
–
–
–
–
–
–
4
–
–
–
–
–
–
–
4
mA
mA
mA
mA
mA
mA
mA
Operating current
(DUAL OUTPUT FAST READ)
C = 0.1VCC / 0.9VCC at 75MHz,
DQ1 = open
15
15
15
15
15
15
15
15
15
15
15
15
ICC4
Operating current
(PAGE PROGRAM)
S# = VCC
S# = VCC
S# = VCC
S# = VCC
S# = VCC
Operating current
(DUAL INPUT FAST PROGRAM)
ICC5
ICC6
ICC7
Operating current
(WRITE STATUS REGISTER)
Operating current
(SECTOR ERASE)
Operating current
(BULK ERASE)
Table 17: DC Voltage Specifications
Symbol
VIL
Parameter
Test Condition
Min
–0.5
Max
0.3VCC
Units
Input LOW voltage
Input HIGH voltage
Output LOW voltage
Output HIGH voltage
–
V
V
V
V
VIH
–
0.7VCC
–
VCC+0.4
VOL
IOL = 1.6mA
IOL = –100µA
0.4
–
VOH
VCC–0.2
1. All specifications apply to both device grade 6 and device grade 3.
Note:
PDF: 09005aef845665a5
m25px16.pdf - Rev. A 11/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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