M25PX16 Serial Flash Embedded Memory
Maximum Ratings and Operating Conditions
Maximum Ratings and Operating Conditions
Caution: Stressing the device beyond the absolute maximum ratings may cause perma-
nent damage to the device. These are stress ratings only and operation of the device be-
yond any specification or condition in the operating sections of this datasheet is not
recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Table 12: Absolute Maximum Ratings
Symbol
TSTG
Parameter
Storage temperature
Min
–65
—
Max
150
Units
°C
Notes
TLEAD
VIO
Lead temperature during soldering
See note
VCC+0.6
°C
1
Input and output voltage (with respect to
ground)
–0.6
V
VCC
VPP
Supply voltage
–0.6
–0.2
4.0
V
V
V
FAST PROGRAM / ERASE voltage
10.0
2000
2
3
VESD
Electrostatic discharge voltage (Human Body
model)
–2000
1. The TLEAD signal is compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb as-
sembly), the Micron RoHS compliant 7191395 specification, and the European directive
on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
Notes:
2. Avoid applying VPPH to the W#/VPP pin during the BULK ERASE operation.
3. The VESD signal: JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
Table 13: Operating Conditions
Symbol
Parameter
Min
2.3
Max
3.6
Unit
V
VCC
VPPH
TA
Supply voltage
Supply voltage on VPP pin
8.5
9.5
V
Ambient operating temperature (device grade 6)
Ambient operating temperature (device grade 3)
–40
–40
85
°C
°C
TA
125
Table 14: Data Retention and Endurance
Parameter
PROGRAM and ERASE cycles
Data Retention
Condition
Min
Max
Unit
Grade 3; Autograde 6; Grade 6
at 55°C
100,000
20
–
–
Cycles per sector
years
PDF: 09005aef845665a5
m25px16.pdf - Rev. A 11/12 EN
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