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M25P40-VMN6PB 参数 Datasheet PDF下载

M25P40-VMN6PB图片预览
型号: M25P40-VMN6PB
PDF下载: 下载PDF文件 查看货源
内容描述: M25P40 3V的4Mb串行Flash的嵌入式存储器 [M25P40 3V 4Mb Serial Flash Embedded Memory]
分类和应用: 存储内存集成电路光电二极管时钟
文件页数/大小: 54 页 / 717 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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M25P40 Serial Flash Embedded Memory  
AC Characteristics  
Table 22: AC Specifications (40 MHz, Device Grade 6, VCC[min]=2.3V) (Continued)  
Symbol  
tRES1  
Alt.  
Parameter  
Min  
Typ  
Max  
30  
Unit  
μs  
Notes  
S# HIGH to STANDBY without electronic signature read  
S# HIGH to STANDBY with electronic signature read  
4
4
tRES2  
30  
μs  
1. Applies to entire table: Maximum frequency in the VCC range 2.3V to 2.7V is 40MHz.  
Notes:  
2. READ DATA BYTES at HIGHER SPEED, PAGE PROGRAM, SECTOR ERASE, BLOCK ERASE,  
DEEP POWER-DOWN, READ ELECTRONIC SIGNATURE, WRITE ENABLE/DISABLE, READ ID,  
READ/WRITE STATUS REGISTER  
3. The tCH and tCL signals must be greater than or equal to 1/fC.  
4. The tCLCH, tCHCL, tSHQZ, tHHQX, tHLQZ, tDP, tRES1, and tRES2 signal values are guaranteed by  
characterization, not 100% tested in production.  
5. The tCLCH and tCHCLsignals clock rise and fall time values are expressed as a slew-rate.  
6. The tWHSL and tSHWLsignals are only applicable as a constraint for a WRITE STATUS REGIS-  
TER command when SRWD bit is set at 1.  
PDF: 09005aef8456654f  
m25p40.pdf - Rev. G 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
43  
© 2011 Micron Technology, Inc. All rights reserved.  
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