Micron M25P40 Serial Flash Embedded Memory
Power-Up Timing and Write Inhibit Voltage Specifications
Power-Up Timing and Write Inhibit Voltage Specifications
Table 8: Power-Up Timing and VWI Threshold
Symbol
tVSL
Parameter
VCC(min) to S# LOW
Min
10
Max
–
Unit
μs
tPUW
VWI
Time delay to write instruction
1.0
1.0
1.0
10
ms
V
Write Inhibit voltage (device grade 3)
Write Inhibit voltage (device grade 6)
2.1
2.1
VWI
V
1. Parameters are characterized only.
Note:
If the time, tVSL, has elapsed, after VCC rises above VCC(min), the device can be selected
for READ instructions even if the tPUW delay has not yet fully elapsed.
VPPH must be applied only when VCC is stable and in the VCCmin to VCCmax voltage
range.
PDF: 09005aef8456654f
m25p40.pdf - Rev. Y 8/12 EN
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