Micron M25P40 Serial Flash Embedded Memory
AC Characteristics
Table 19: Instruction Times, Process Technology 110nm
Symbol Parameter
Min
Typ
1.3
0.8
Max
15
Units
ms
Notes
tW
tPP
tPP
WRITE STATUS REGISTER cycle time
–
–
–
PAGE PROGRAM cycle time (256 bytes)
5
ms
2
PAGE PROGRAM cycle time (n bytes)
int (n/8) x
0.025
tSE
tBE
SECTOR ERASE cycle time
BULK ERASE cycle time
–
–
0.6
4.5
3
s
s
10
1. Applies to the entire table: 110nm technology devices are identified by the process iden-
Notes:
tification digit 4 in the device marking and the process letter B in the part number.
2. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained in one sequence that includes all the bytes rather than in several
sequences of only a few bytes (1 < n < 256).
Table 20: Instruction Times, Process Technology 150nm
Symbol Parameter
Min
Typ
Max
15
Units
ms
Notes
tW
tPP
tPP
tSE
tBE
WRITE STATUS REGISTER cycle time
–
–
–
–
–
5
1.4
PAGE PROGRAM cycle time (256 bytes)
PAGE PROGRAM cycle time (n bytes)
SECTOR ERASE cycle time
5
ms
2
0.4+n*1/256
1.0
3
s
s
BULK ERASE cycle time
4.5
10
1. Applies to the entire table: 150nm technology devices are identified by the process iden-
Notes:
tification digit 4 in the device marking and the process letter B in the part number.
2. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained in one sequence that includes all the bytes rather than in several
sequences of only a few bytes (1 < n < 256).
Table 21: AC Specifications (25 MHz, Device Grade 3, VCC[min]=2.7V)
Symbol
fC
Alt.
fC
Parameter
Clock frequency for commands (See note)
Clock frequency for READ command
Min
D.C.
D.C.
18
Typ
–
Max
Unit
MHz
MHz
ns
Notes
25
20
–
1
fR
–
–
tCH
tCLH Clock HIGH time
tCLL Clock LOW time
–
2
tCL
18
–
–
ns
2
tCLCH
tCHCL
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
–
–
Clock rise time (peak to peak)
Clock fall time (peak to peak)
0.1
0.1
10
–
–
V/ns
V/ns
ns
3, 4
3, 4
–
–
tCSS S# active setup time (relative to C)
S# not active hold time (relative to C)
tDSU Data in setup time
–
–
—
10
–
–
ns
5
–
–
ns
tDH
–
Data in hold time
5
–
–
ns
S# active hold time (relative to C)
S# not active setup time (relative to C)
10
–
–
ns
–
10
–
–
ns
PDF: 09005aef8456654f
m25p40.pdf - Rev. Y 8/12 EN
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