欢迎访问ic37.com |
会员登录 免费注册
发布采购

M25P40-VMS6Tx 参数 Datasheet PDF下载

M25P40-VMS6Tx图片预览
型号: M25P40-VMS6Tx
PDF下载: 下载PDF文件 查看货源
内容描述: 美光M25P40串行闪存的嵌入式存储器 [Micron M25P40 Serial Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 59 页 / 785 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号M25P40-VMS6Tx的Datasheet PDF文件第29页浏览型号M25P40-VMS6Tx的Datasheet PDF文件第30页浏览型号M25P40-VMS6Tx的Datasheet PDF文件第31页浏览型号M25P40-VMS6Tx的Datasheet PDF文件第32页浏览型号M25P40-VMS6Tx的Datasheet PDF文件第34页浏览型号M25P40-VMS6Tx的Datasheet PDF文件第35页浏览型号M25P40-VMS6Tx的Datasheet PDF文件第36页浏览型号M25P40-VMS6Tx的Datasheet PDF文件第37页  
Micron M25P40 Serial Flash Embedded Memory  
READ ELECTRONIC SIGNATURE  
READ ELECTRONIC SIGNATURE  
Once the device enters DEEP POWER-DOWN mode, all commands are ignored except  
READ ELECTRONIC SIGNATURE and RELEASE from DEEP POWER-DOWN. Executing  
either of these commands takes the device out of the DEEP POWER-DOWN mode.  
The READ ELECTRONIC SIGNATURE command is entered by driving chip select (S#)  
LOW, followed by the command code and three dummy bytes on serial data input  
(DQ0) . Each bit is latched in on the rising edge of serial clock C. The 8-bit electronic  
signature is shifted out on serial data output DQ1 on the falling edge of C; S# must be  
driven LOW the entire duration of the sequence for the electronic signature to be read.  
However, driving S# HIGH after the command code, but before the entire 8-bit electron-  
ic signature has been output for the first time, still ensures that the device is put into  
STANDBY mode.  
Except while an ERASE, PROGRAM, or WRITE STATUS REGISTER cycle is in progress,  
the READ ELECTRONIC SIGNATURE command provides access to the 8-bit electronic  
signature of the device, and can be applied even if DEEP POWER-DOWN mode has not  
been entered. The READ ELECTRONIC SIGNATURE command is not executed while an  
ERASE, PROGRAM, or WRITE STATUS REGISTER cycle is in progress and has no effect  
on the cycle in progress.  
The READ ELECTRONIC SIGNATURE command is terminated by driving S# high after  
the electronic signature has been read at least once. Sending additional clock cycles C  
while S# is driven LOW causes the electronic signature to be output repeatedly.  
If S# is driven HIGH, the device is put in STANDBY mode immediately unless it was pre-  
viously in DEEP POWER-DOWN mode. If previously in DEEP POWER-DOWN mode, the  
device transitions to STANDBY mode with delay as described here. Once in STANDBY  
mode, the device waits to be selected so that it can receive, decode, and execute instruc-  
tions.  
• If S# is driven HIGH before the electronic signature is read, transition to STANDBY  
mode is delayed by tRES1, as shown in the RELEASE from DEEP POWER-DOWN com-  
mand sequence. S# must remain HIGH for at least tRES1(max).  
• If S# is driven HIGH after the electronic signature is read, transition to STANDBY  
mode is delayed by tRES2. S# must remain HIGH for at least tRES2(max).  
Figure 20: READ ELECTRONIC SIGNATURE Command Sequence  
0
7
8
C
x
C
tRES2  
LSB  
DQ0  
Command  
High-Z  
MSB  
Electronic Signature  
LSB  
D
D
D
D
D
D
D
D
DQ1  
OUT  
OUT  
OUT  
OUT  
OUT  
OUT  
OUT  
OUT  
MSB  
Dummy cycles  
Deep Power-Down  
Standby  
Don’t Care  
1. Cx = 7 + (A[MAX] + 1).  
Note:  
PDF: 09005aef8456654f  
m25p40.pdf - Rev. Y 8/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
33  
© 2011 Micron Technology, Inc. All rights reserved.