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M25P40-VMS6Tx 参数 Datasheet PDF下载

M25P40-VMS6Tx图片预览
型号: M25P40-VMS6Tx
PDF下载: 下载PDF文件 查看货源
内容描述: 美光M25P40串行闪存的嵌入式存储器 [Micron M25P40 Serial Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 59 页 / 785 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Micron M25P40 Serial Flash Embedded Memory  
RELEASE from DEEP POWER-DOWN  
RELEASE from DEEP POWER-DOWN  
Once the device has entered DEEP POWER-DOWN mode, all commands are ignored ex-  
cept RELEASE from DEEP POWER-DOWN and READ ELECTRONIC SIGNATURE. Exe-  
cuting either of these commands takes the device out of the DEEP POWER-DOWN  
mode.  
The RELEASE from DEEP POWER-DOWN command is entered by driving chip select  
(S#) LOW, followed by the command code on serial data input (DQ0). S# must be driven  
LOW for the entire duration of the sequence.  
The RELEASE from DEEP POWER-DOWN command is terminated by driving S# HIGH.  
Sending additional clock cycles on serial clock C while S# is driven LOW causes the  
command to be rejected and not executed.  
After S# has been driven HIGH, followed by a delay, tRES, the device is put in the STAND-  
BY mode. S# must remain HIGH at least until this period is over. The device waits to be  
selected so that it can receive, decode, and execute commands.  
Any RELEASE from DEEP POWER-DOWN command issued while an ERASE, PRO-  
GRAM, or WRITE cycle is in progress is rejected without any effect on the cycle that is in  
progress.  
Figure 19: RELEASE from DEEP POWER-DOWN Command Sequence  
0
7
C
DQ0  
DQ1  
tRDP  
LSB  
Command  
High-Z  
MSB  
Deep Power-Down Mode  
Standby Mode  
Don’t Care  
PDF: 09005aef8456654f  
m25p40.pdf - Rev. Y 8/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
32  
© 2011 Micron Technology, Inc. All rights reserved.