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M25P40-VMP6Txx 参数 Datasheet PDF下载

M25P40-VMP6Txx图片预览
型号: M25P40-VMP6Txx
PDF下载: 下载PDF文件 查看货源
内容描述: 美光M25P40串行闪存的嵌入式存储器 [Micron M25P40 Serial Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 59 页 / 785 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号M25P40-VMP6Txx的Datasheet PDF文件第39页浏览型号M25P40-VMP6Txx的Datasheet PDF文件第40页浏览型号M25P40-VMP6Txx的Datasheet PDF文件第41页浏览型号M25P40-VMP6Txx的Datasheet PDF文件第42页浏览型号M25P40-VMP6Txx的Datasheet PDF文件第44页浏览型号M25P40-VMP6Txx的Datasheet PDF文件第45页浏览型号M25P40-VMP6Txx的Datasheet PDF文件第46页浏览型号M25P40-VMP6Txx的Datasheet PDF文件第47页  
Micron M25P40 Serial Flash Embedded Memory  
AC Characteristics  
Table 22: AC Specifications (50 MHz, Device Grade 6, VCC[min]=2.7V) (Continued)  
Symbol  
tSHSL  
Alt.  
Parameter  
Min  
100  
Typ  
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
μs  
Notes  
tCSH S# deselect time  
tSHQZ  
tCLQV  
tCLQX  
tHLCH  
tCHHH  
tHHCH  
tCHHL  
tHHQX  
tHLQZ  
tWHSL  
tSHWL  
tDP  
tDIS  
tV  
tHO  
Output disable time  
8
3
Clock LOW to output valid  
8
Output hold time  
0
HOLD# setup time (relative to C)  
HOLD# hold time (relative to C)  
HOLD# setup time (relative to C)  
HOLD# hold time (relative to C)  
HOLD# to output LOW-Z  
5
5
5
5
tLZ  
tHZ  
8
3
3
5
5
3
3
3
HOLD# to output HIGH-Z  
8
WRITE PROTECT setup time  
20  
100  
WRITE PROTECT hold time  
S# HIGH to DEEP POWER-DOWN mode  
S# HIGH to STANDBY without electronic signature read  
S# HIGH to STANDBY with electronic signature read  
3
tRES1  
30  
30  
μs  
tRES2  
μs  
1. READ DATA BYTES at HIGHER SPEED, PAGE PROGRAM, SECTOR ERASE, BLOCK ERASE,  
DEEP POWER-DOWN, READ ELECTRONIC SIGNATURE, WRITE ENABLE/DISABLE, READ ID,  
READ/WRITE STATUS REGISTER  
Notes:  
2. The tCH and tCL signals must be greater than or equal to 1/fC.  
3. The tCLCH, tCHCL, tSHQZ, tHHQX, tHLQZ, tDP, tRES1, and tRES2 signal values are guaranteed by  
characterization, not 100% tested in production.  
4. The tCLCH and tCHCLsignals clock rise and fall time values are expressed as a slew-rate.  
5. The tWHSL and tSHWLsignals are only applicable as a constraint for a WRITE STATUS REGIS-  
TER command when SRWD bit is set at 1.  
Table 23: AC Specifications (40 MHz, Device Grade 6, VCC[min]=2.3V)  
Symbol  
fC  
Alt.  
fC  
Parameter  
Clock frequency for commands (See note)  
Clock frequency for READ command  
Min  
D.C.  
D.C.  
11  
11  
0.1  
0.1  
5
Typ  
Max  
Unit  
MHz  
MHz  
ns  
Notes  
40  
25  
2
fR  
tCH  
tCLH Clock HIGH time  
tCLL Clock LOW time  
3
tCL  
ns  
3
tCLCH  
tCHCL  
tSLCH  
tCHSL  
tDVCH  
tCHDX  
tCHSH  
tSHCH  
Clock rise time (peak to peak)  
Clock fall time (peak to peak)  
V/ns  
V/ns  
ns  
4, 5  
4, 5  
tCSS S# active setup time (relative to C)  
S# not active hold time (relative to C)  
tDSU Data in setup time  
5
ns  
2
ns  
tDH  
Data in hold time  
5
ns  
S# active hold time (relative to C)  
S# not active setup time (relative to C)  
5
ns  
5
ns  
PDF: 09005aef8456654f  
m25p40.pdf - Rev. Y 8/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
43  
© 2011 Micron Technology, Inc. All rights reserved.