DC and AC parameters
M25P128
Table 17. AC characteristics for 130 nm devices (continued)
Test conditions specified in Table 11 and Table 12
Symbol
Alt.
Parameter
Bulk Erase Cycle Time
Bulk Erase Cycle Time (VPP = VPPH
Min. Typ.
Max.
250
Unit
105
tBE
s
)
56(2)
1. tCH and tCL must be greater than or equal to 1/fC (max).
2. Value is guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for WRSR instruction when SRWD is set to 1.
5. VPPH should be kept at a valid level until the program or erase operation has completed and its result
(success or failure) is known.
6. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. If only a
single byte is programmed, the estimated programming time is close to the time needed to program a full
page of 256 Bytes. Therefore, it is highly recommended to use the Page Program (PP) instruction with a
sequence of 256 consecutive Bytes. (1 ≤ n ≤ 256)
Figure 20. Serial input timing
tSHSL
S
tCHSL
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCHDX
tCLCH
MSB IN
LSB IN
D
Q
High Impedance
AI01447C
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