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JS28F512P30BF 参数 Datasheet PDF下载

JS28F512P30BF图片预览
型号: JS28F512P30BF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm  
Pinouts and Ballouts  
Figure 7: 64-Ball Easy BGA (Top View – Balls Down) – 512Mb, 1Gb, and 2Gb  
1
2
3
4
5
6
7
8
A
B
C
D
E
A1  
A2  
A6  
A8  
A9  
V
A13  
A14  
V
A18 A22  
PP  
CC  
V
CE#  
A25 A19 A26  
SS  
A3  
A4  
A7  
A5  
A10 A12  
A15 WP#  
A20 A21  
A16 A17  
A11 RST# V  
V
CCQ  
CCQ  
DQ8 DQ1 DQ9 DQ3 DQ4  
CLK DQ15 RFU  
F
RFU DQ0 DQ10 DQ11 DQ12 ADV# WAIT OE#  
G
H
A23 RFU DQ2 V  
DQ5 DQ6 DQ14 WE#  
CCQ  
A27  
DQ13  
DQ7 A24  
V
V
V
V
SS  
SS  
CC  
SS  
1. A1 is the least significant address bit.  
Notes:  
2. A25 is valid for 512Mb densities and above; otherwise, it is a no connect (NC).  
3. A26 is valid for 1Gb densities and above; otherwise, it is a no connect (NC).  
4. A27 is valid for 2Gb densities and above; otherwise, it is a no connect (NC).  
5. One dimple on package denotes Pin 1 which will always be in the upper left corner of  
the package, in reference to the product mark.  
PDF: 09005aef845667b3  
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
14  
© 2013 Micron Technology, Inc. All rights reserved.  
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