256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Memory Organization
Table 4: Signal Descriptions (Continued)
Name
Type
Description
VCC
Supply
Supply voltage: Provides the power supply for READ, PROGRAM, and ERASE operations.
The command interface is disabled when VCC <= VLKO. This prevents WRITE operations from
accidentally damaging the data during power-up, power-down, and power surges. If the pro-
gram/erase controller is programming or erasing during this time, then the operation aborts
and the contents being altered will be invalid.
A 0.1μF capacitor should be connected between VCC and VSS to decouple the current surges
from the power supply. The PCB track widths must be sufficient to carry the currents required
during PROGRAM and ERASE operations (see DC Characteristics).
VCCQ
Supply
I/O supply voltage: Provides the power supply to the I/O pins and enables all outputs to be
powered independently from VCC
.
VSS
Supply
–
Ground: All VSS pins must be connected to the system ground.
Reserved for future use: RFUs should be not connected.
RFU
Memory Organization
Memory Configuration
The main memory array is divided into 128KB or 64KW uniform blocks.
Memory Map – 256Mb–2Gb Density
Table 5: Blocks[2047:0]
Address Range (x8)
Address Range (x16)
Block
Size
Block
Size
Block
Start
End
Start
End
2047
128KB
FFE 0000h
FFF FFFFh
64KW
7FF 0000h
7FF FFFFh
⋮
⋮
⋮
⋮
⋮
1023
7FE 0000h
7FF FFFFh
3FF 0000h
3FF FFFFh
⋮
⋮
⋮
⋮
⋮
511
3FE 0000h
3FF FFFFh
1FF 0000h
1FF FFFFh
⋮
⋮
⋮
⋮
⋮
255
1FE 0000h
1FF FFFFh
0FF 0000h
0FF FFFFh
⋮
127
⋮
⋮
⋮
⋮
⋮
0FE 0000h
0FF FFFFh
07F 0000h
07F FFFFh
⋮
⋮
⋮
⋮
63
⋮
07E 0000h
⋮
07F FFFFh
⋮
03F 0000h
⋮
03F FFFFh
⋮
0
000 0000h
001 FFFFh
000 0000h
000 FFFFh
1. 256Mb device = blocks 0–255; 512Mb device = blocks 0–511; 1Gb device = blocks 0–1023;
2Gb device = blocks 0–2047, including upper and lower die.
Note:
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
13
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