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JS28F256P30B 参数 Datasheet PDF下载

JS28F256P30B图片预览
型号: JS28F256P30B
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 98 页 / 1366 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Configuration Register  
Figure 14: Example Latency Count Setting Using Code 3  
t
Data  
0
1
2
3
4
CLK  
CE#  
ADV#  
Address  
A[MAX:1]  
Code 3  
High-Z  
D[15:0]  
Data  
R103  
End of Wordline Considerations  
End of wordline (EOWL) wait states can result when the starting address of the burst op-  
eration is not aligned to a 16-word boundary; that is, A[4:1] of the start address does not  
equal 0x0. The figure below illustrates the end of wordline wait state(s) that occur after  
the first 16-word boundary is reached. The number of data words and wait states is  
summarized in the table below.  
Figure 15: End of Wordline Timing Diagram  
Latency Count  
CLK  
Address  
A[MAX:1]  
DQ[15:0]  
ADV#  
Data  
Data  
Data  
OE#  
EOWL  
WAIT#  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
48  
© 2013 Micron Technology, Inc. All rights reserved.  
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