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JS28F256P30TFA 参数 Datasheet PDF下载

JS28F256P30TFA图片预览
型号: JS28F256P30TFA
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 95 页 / 1340 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Registers  
2. Always clear the Status Register prior to resuming erase operations. It avoids Status Reg-  
ister ambiguity when issuing commands during Erase Suspend. If a command sequence  
error occurs during an erase-suspend state, the Status Register contains the command  
sequence error status (SR[7,5,4] set). When the erase operation resumes and finishes,  
possible errors during the erase operation cannot be detected via the Status Register be-  
cause it contains the previous error status.  
3. A Clear SR command (50h) or Reset must be issued with 15µs delay after the Error bits  
(SR4 or SR5) is set during Program/Erase operations.  
Clear Status Register  
The Clear Status Register command clears the status register. It functions independent  
of VPP. The Write State Machine (WSM) sets and clears SR[7,6,2], but it sets bits SR[5:3,1]  
without clearing them. The Status Register should be cleared before starting a com-  
mand sequence to avoid any ambiguity. A device reset also clears the Status Register.  
Read Configuration Register  
The Read Configuration Register (RCR) is a 16-bit read/write register used to select bus-  
read mode (synchronous or asynchronous), and to configure device synchronous burst  
read characteristics. To modify RCR settings, use the Configure Read Configuration Reg-  
ister command. RCR contents can be examined using the Read Device Identifier com-  
mand, and then reading from offset 0x05. On power-up or exit from reset, the RCR de-  
faults to asynchronous mode. Details about each RCR bit follow the table.  
Table 17: Read Configuration Register  
Bit Name  
Description  
15 Read mode (RM)  
0 = Synchronous burst-mode read  
1 = Asynchronous page-mode read (default)  
14:11 Latency count  
(LC[3:0])  
0000 = Code 0 (reserved)  
0001 = Code 1 (reserved)  
0010 = Code 2  
0011 = Code 3  
0100 = Code 4  
0110 = Code 6  
0111 = Code 7  
1000 = Code 8  
1001 = Code 9  
1010 = Code 10  
1011 = Code11  
1100 = Code 12  
1101 = Code 13  
1110 = Code 14  
1111 = Code 15 (default)  
0101 = Code 5  
10 WAIT polarity (WP)  
0 = WAIT signal is active low (default)  
1 = WAIT signal is active high  
9
8
Reserved (R)  
Default 0, Non-changeable  
WAIT delay (WD)  
0 = WAIT deasserted with valid data  
1 = WAIT deasserted one data cycle before valid data (default)  
7
6
Burst sequence (BS)  
Clock edge (CE)  
Default 0, Non-changeable  
0 = Falling edge  
1 = Rising edge (default)  
5:4 Reserved (R)  
Burst wrap (BW)  
Default 0, Non-changeable  
3
0 = Wrap; Burst accesses wrap within burst length set by BL[2:0]  
1 = No Wrap; Burst accesses do not wrap within burst length (default)  
2:0 Burst length (BL[2:0]) 001 = 4-word burst  
010 = 8-word burst  
011 = 16-word burst  
111 = Continuous-word burst (default)  
(Other bit settings are reserved)  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. A 1/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.