256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Common Flash Interface
Table 19: CFI Query System Interface Information
Note 1 applies to the entire table
Address
x16
x8
Data
Description
Value
1Bh
36h
0027h
VCC logic supply minimum program/erase voltage
Bits[7:4] BCD value in volts
2.7V
Bits[3:0] BCD value in 100mV
1Ch
1Dh
1Eh
38h
3Ah
3Ch
0036h
00B5h
00C5h
VCC logic supply maximum program/erase voltage
Bits[7:4] BCD value in volts
Bits[3:0] BCD value in 100mV
3.6V
11.5V
12.5V
VPPH (programming) supply minimum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
VPPH (programming) supply maximum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 10mV
1Fh
20h
21h
22h
3Eh
40h
42h
44h
0009h
000Ah
000Ah
0012h
0013h
0014h
0015h
0001h
0002h
0002h
0002h
0002h
0002h
0002h
Typical timeout for single byte/word program = 2nμs
Typical timeout for maximum size buffer program = 2nμs
Typical timeout per individual block erase = 2nms
Typical timeout for full chip erase = 2nms
512µs
1024µs
1s
256Mb: 262s
512Mb: 524s
1Gb: 1048s
2Gb: 2097s
1024µs
23h
24h
25h
26h
46h
48h
4Ah
4Ch
Maximum timeout for byte/word program = 2n times typical
Maximum timeout for buffer program = 2n times typical
Maximum timeout per individual block erase = 2n times typical
Maximum timeout for chip erase = 2n times typical
4096µs
4s
256Mb: 1048s
512Mb: 2096s
1Gb: 4194s
2Gb: 8388s
1. The values in this table are valid for both packages.
Note:
Table 20: Device Geometry Definition
Address
x16
x8
Data
0019h
001Ah
001Bh
001Ch
Description
Device size = 2n in number of bytes
Value
32MB
27h
4Eh
64MB
128MB
256MB
28h
29h
50h
52h
0002h
0000h
Flash device interface code description
x8, x16
asynchronous
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
50
© 2012 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
