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JS28F256M29EWHB 参数 Datasheet PDF下载

JS28F256M29EWHB图片预览
型号: JS28F256M29EWHB
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 75 页 / 855 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash  
Registers  
Figure 5: Data Polling Flowchart  
Start  
Read DQ7, DQ5, and DQ1  
at valid address1  
Yes  
DQ7 = Data  
No  
No  
No  
DQ5 = 1  
Yes  
DQ1 = 1  
Yes  
Read DQ7 at valid address  
Yes  
DQ7 = Data  
No  
Failure2  
Success  
1. Valid address is the address being programmed or an address within the block being  
erased or on which a BLANK CHECK operation has been executed.  
Notes:  
2. The data polling process does not support the BLANK CHECK operation. The process  
represented in the Toggle Bit Flowchart figure can provide information on the BLANK  
CHECK operation.  
3. Failure results: DQ5 = 1 indicates an operation error; DQ1 = 1 indicates a WRITE TO BUF-  
FER PROGRAM ABORT operation.  
PDF: 09005aef849b4b09  
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
18  
© 2012 Micron Technology, Inc. All rights reserved.