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JS28F128P30TF75A 参数 Datasheet PDF下载

JS28F128P30TF75A图片预览
型号: JS28F128P30TF75A
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆Axcell P30-65nm闪存 [Numonyx Axcell P30-65nm Flash Memory]
分类和应用: 闪存
文件页数/大小: 90 页 / 1194 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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P30-65nm SBC  
To read data from the device, the Read Array command must be issued. Read Array,  
Read Status Register, Read Device Identifier, Read CFI, and Program Resume are valid  
commands during a program suspend.  
During a program suspend, deasserting CE# places the device in standby, reducing  
active current. VPP must remain at its programming level, and WP# must remain  
unchanged while in program suspend. If RST# is asserted, the device is reset.  
8.5  
8.6  
Program Resume  
The Resume command instructs the device to continue programming, and  
automatically clears Status Register bits SR[7,2]. This command can be written to any  
address. If error bits are set, the Status Register should be cleared before issuing the  
next instruction. RST# must remain deasserted (see Figure 33, “Program Suspend/  
Resume Flowchart” on page 74).  
Program Protection  
When VPP = VIL, absolute hardware write protection is provided for all device blocks. If  
VPP is at or below VPPLK, programming operations halt and SR.3 is set indicating a VPP-  
level error. Block Lock Registers are not affected by the voltage level on VPP; they may  
still be programmed and read, even if VPP is less than VPPLK  
.
Figure 8: Example VPP Supply Connections  
VCC  
VCC  
VPP  
VCC  
VPP  
VCC  
VPP  
PROT #  
10K Ω  
Low-voltage Programming only  
Logic Control of Device Protection  
Factory Programming with VPP = VPPH  
Complete write/Erase Protection when VPP VPPLK  
VCC  
VCC  
VCC  
VCC  
VPP  
VPP=VPPH  
VPP  
Low Voltage Programming Only  
Full Device Protection Unavailable  
Low Voltage and Factory Programming  
Datasheet  
28  
Apr 2010  
Order Number: 208033-02  
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