TCN75
TCN75 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
2.7V
≤
V
DD
≤
5.5V; -55°C
≤
(T
A
= T
J
)
≤
125°C, C
L
= 80 pF, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Unit
Test Conditions
Serial Port Timing
f
SC
t
LOW
t
HIGH
t
R
t
F
t
SU(START)
t
SC
t
H(START)
t
DSU
t
DH
t
SU(STOP)
t
IDLE
Note
1:
Serial Port Frequency
Low Clock Period
High Clock Period
SCL and SDA Rise Time
SCL and SDA Fall Time
Start Condition Setup Time (for
repeated Start Condition)
SCL Clock Period
Start Condition Hold Time
Data in Setup Time to SCL High
Data in Hold Time after SCL Low
Stop Condition Setup Time
Bus Free Time Prior to New Transition
0
1250
1250
—
—
1250
2.5
100
100
0
100
1250
100
—
—
—
—
—
—
—
—
—
—
—
400
—
—
250
250
—
—
—
—
—
—
—
kHz
nsec
nsec
nsec
nsec
nsec
μsec
nsec
nsec
nsec
nsec
nsec
Output current should be minimized for best temperature accuracy. Power dissipation within the TCN75 will cause self-heating and
temperature drift. At maximum rated output current and saturation voltage, 4 mA and 0.8V, respectively, the error amounts to 0.544°C for
the SOIC.
All part types of the TCN75 will operate properly over the wider power supply range of 2.7V to 5.5V. Each part type is tested and specified
for rated accuracy at its nominal supply voltage. As V
DD
varies from the nominal value, accuracy will degrade 1°C/V of V
DD
change.
Human body model, 100 pF discharged through a 1.5k resistor.
2:
3:
TIMING DIAGRAM
tSC
SCL
t
H
(Start)
SDA
Data In
tDSU
SDA
Data Out
t
DH
t
SU
(Stop)
DS21490C-page 4
©
2006 Microchip Technology Inc.
MICROCHIP [ MICROCHIP TECHNOLOGY ]
