TCN75
*Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage (VDD) ............................................6.0V
ESD Susceptibility (Note 3) ...............................1000V
Voltage on Pins:
A0, A1, A2.......... (GND – 0.3V) to (VDD + 0.3V)
Voltage on Pins:
SDA, SCL, INT/CMPTR .. (GND – 0.3V) to 5.5V
Thermal Resistance (Junction to Ambient)
8-Pin SOIC..........................................170°C/W
8-Pin MSOP.......................................250°C//W
Operating Temperature Range (TJ): -55°C to +125°C
Storage Temperature Range (TSTG): -65°C to +150°C
TCN75 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: V = 2.7V – 5.5V, -55°C ≤ (T = T ) ≤ 125°C, unless otherwise noted.
DD
A
J
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Power Supply
V
Power Supply Voltage
Operating Current
2.7
—
5.5
—
DD
I
—
—
0.250
—
—
1.0
mA
Serial Port Inactive (T = T = 25°C)
A J
DD
Serial Port Active
Shutdown Mode, Serial Port
Inactive (T = T = 25°C)
I
Standby Supply Current
—
—
1
—
μA
DD1
A
J
INT/CMPTR Output
I
Sink Current: INT/CMPTR,
SDA Outputs
1
4
mA
Note 1
OL
t
INT/CMPTR Response Time
Output Low Voltage
1
—
—
6
t
User Programmable
I = 4.0 mA
OL
TRIP
CONV
V
—
0.8
V
OL
Temp-to-Bits Converter
ΔT
Temperature Accuracy (Note 2)
—
±3
—
°C
-55°C ≤ T ≤ +125°C
A
V
= 3.3V: TCN75-3.3 MOA,
DD
TCN75-3.3 MUA
= 5.0V: TCN75-5.0 MOA,
V
DD
TCN75-5.0 MUA
—
—
—
—
±0.5
55
±3
—
—
—
°C
25°C ≤ T ≤ 100°C
A
t
Conversion Time
msec
°C
CONV
T
T
TEMP Default Value
80
Power-up
Power-up
SET(PU)
T
Default Value
HYST
75
°C
HYST(PU)
2-Wire Serial Bus Interface
V
V
V
Logic Input High
V
x 0.7
DD
—
—
—
V
V
IH
Logic Input Low
—
—
—
—
—
V
x 0.3
DD
IL
Logic Output Low
—
0.4
—
—
6
V
I
= 3 mA
OL
OL
C
Input Capacitance SDA, SCL
I/O Leakage
15
pF
pA
mA
IN
I
I
±100
—
(T = T = 25°C)
A J
LEAK
OL(SDA)
SDA Output Low Current
© 2006 Microchip Technology Inc.
DS21490C-page 3
MICROCHIP [ MICROCHIP ]
