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PIC18F4520-I/PT 参数 Datasheet PDF下载

PIC18F4520-I/PT图片预览
型号: PIC18F4520-I/PT
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚增强型闪存微控制器与10位A / D和纳瓦技术 [28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器
文件页数/大小: 412 页 / 6898 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2420/2520/4420/4520  
The EECON1 register (Register 7-1) is the control  
register for data and program memory access. Control  
bit EEPGD determines if the access will be to program  
or data EEPROM memory. When clear, operations will  
access the data EEPROM memory. When set, program  
memory is accessed.  
7.0  
DATA EEPROM MEMORY  
The data EEPROM is a nonvolatile memory array,  
separate from the data RAM and program memory, that  
is used for long-term storage of program data. It is not  
directly mapped in either the register file or program  
memory space but is indirectly addressed through the  
Special Function Registers (SFRs). The EEPROM is  
readable and writable during normal operation over the  
entire VDD range.  
Control bit, CFGS, determines if the access will be to  
the Configuration registers or to program memory/data  
EEPROM memory. When set, subsequent operations  
access Configuration registers. When CFGS is clear,  
the EEPGD bit selects either program Flash or data  
EEPROM memory.  
Five SFRs are used to read and write to the data  
EEPROM as well as the program memory. They are:  
• EECON1  
• EECON2  
• EEDATA  
• EEADR  
The WREN bit, when set, will allow a write operation.  
On power-up, the WREN bit is clear. The WRERR bit is  
set in hardware when the WR bit is set and cleared  
when the internal programming timer expires and the  
write operation is complete.  
The data EEPROM allows byte read and write. When  
interfacing to the data memory block, EEDATA holds  
the 8-bit data for read/write and the EEADR register  
holds the address of the EEPROM location being  
accessed.  
Note:  
During normal operation, the WRERR  
may read as ‘1’. This can indicate that a  
write operation was prematurely termi-  
nated by a Reset, or a write operation was  
attempted improperly.  
The EEPROM data memory is rated for high erase/write  
cycle endurance. A byte write automatically erases the  
location and writes the new data (erase-before-write).  
The write time is controlled by an on-chip timer; it will  
vary with voltage and temperature as well as from chip  
to chip. Please refer to parameter D122 (Table 26-1 in  
Section 26.0 “Electrical Characteristics”) for exact  
limits.  
The WR control bit initiates write operations. The bit  
can be set but not cleared in software. It is only cleared  
in hardware at the completion of the write operation.  
Note:  
The EEIF interrupt flag bit (PIR2<4>) is set  
when the write is complete. It must be  
cleared in software.  
Control bits, RD and WR, start read and erase/write  
operations, respectively. These bits are set by firmware  
and cleared by hardware at the completion of the  
operation.  
7.1  
EEADR Register  
The EEADR register is used to address the data  
EEPROM for read and write operations. The 8-bit  
range of the register can address a memory range of  
256 bytes (00h to FFh).  
The RD bit cannot be set when accessing program  
memory (EEPGD = 1). Program memory is read using  
table read instructions. See Section 6.1 “Table Reads  
and Table Writes” regarding table reads.  
7.2  
EECON1 and EECON2 Registers  
The EECON2 register is not a physical register. It is  
used exclusively in the memory write and erase  
sequences. Reading EECON2 will read all ‘0’s.  
Access to the data EEPROM is controlled by two  
registers: EECON1 and EECON2. These are the same  
registers which control access to the program memory  
and are used in a similar manner for the data  
EEPROM.  
© 2008 Microchip Technology Inc.  
DS39631E-page 83  
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