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PIC18F4520-I/PT 参数 Datasheet PDF下载

PIC18F4520-I/PT图片预览
型号: PIC18F4520-I/PT
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚增强型闪存微控制器与10位A / D和纳瓦技术 [28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器
文件页数/大小: 412 页 / 6898 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2420/2520/4420/4520  
NEGF  
Negate f  
NOP  
No Operation  
Syntax:  
NEGF f {,a}  
Syntax:  
NOP  
Operands:  
0 f 255  
a [0,1]  
Operands:  
Operation:  
Status Affected:  
Encoding:  
None  
No operation  
None  
Operation:  
( f ) + 1f  
Status Affected:  
Encoding:  
N, OV, C, DC, Z  
0000  
1111  
0000  
xxxx  
0000  
xxxx  
0000  
xxxx  
0110  
110a  
ffff  
ffff  
Description:  
Location ‘f’ is negated using two’s  
complement. The result is placed in the  
data memory location ‘f’.  
If ‘a’ is ‘0’, the Access Bank is selected.  
If ‘a’ is ‘1’, the BSR is used to select the  
GPR bank (default).  
If ‘a’ is ‘0’ and the extended instruction  
set is enabled, this instruction operates  
in Indexed Literal Offset Addressing  
mode whenever f 95 (5Fh). See  
Section 24.2.3 “Byte-Oriented and  
Bit-Oriented Instructions in Indexed  
Literal Offset Mode” for details.  
Description:  
Words:  
No operation.  
1
1
Cycles:  
Q Cycle Activity:  
Q1  
Q2  
Q3  
No  
Q4  
Decode  
No  
operation  
No  
operation  
operation  
Example:  
None.  
Words:  
Cycles:  
1
1
Q Cycle Activity:  
Q1  
Q2  
Q3  
Q4  
Decode  
Read  
register ‘f’  
Process  
Data  
Write  
register ‘f’  
Example:  
NEGF  
REG, 1  
Before Instruction  
REG  
After Instruction  
REG  
=
0011 1010 [3Ah]  
1100 0110 [C6h]  
=
© 2008 Microchip Technology Inc.  
DS39631E-page 295  
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