PIC18F45J10 FAMILY
TABLE 24-1: MEMORY PROGRAMMING REQUIREMENTS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
DC CHARACTERISTICS
Param
Sym
No.
Characteristic
Min
Typ†
Max
Units
Conditions
Program Flash Memory
Cell Endurance
D130
D131
EP
100
1K
—
—
E/W -40°C to +85°C
VPR
VDD for Read
VMIN
3.6
V
VMIN = Minimum operating
voltage
D132B VPEW Voltage for Self-Timed Erase or
Write:
VDD
2.7
2.25
—
—
—
3.6
2.7
—
V
V
PIC18FXXJ10
PIC18LFXXJ10
VDDCORE
D133A TIW
D133B TIE
Self-Timed Write Cycle Time
2.8
33.0
ms
ms
Self-Timed Page Erased Cycle
Time
—
—
D134 TRETD Characteristic Retention
20
—
—
—
—
Year Provided no other
specifications are violated
D135
IDDP
Supply Current during
Programming
10
mA
†
Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
© 2009 Microchip Technology Inc.
DS39682E-page 315
MICROCHIP [ MICROCHIP ]
