PIC18F2420/2520/4420/4520
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
DC CHARACTERISTICS
Param
Sym
No.
Characteristic
Min
Typ†
Max
Units
Conditions
Data EEPROM Memory
D120
ED
Byte Endurance
100K
VMIN
1M
—
—
E/W -40°C to +85°C
D121 VDRW VDD for Read/Write
5.5
V
Using EECON to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
D123 TRETD Characteristic Retention
—
4
—
—
ms
40
—
Year Provided no other
specifications are violated
D124
D125
TREF
IDDP
Number of Total Erase/Write
Cycles before Refresh(1)
1M
—
10M
10
—
—
E/W -40°C to +85°C
Supply Current during
Programming
mA
Program Flash Memory
Cell Endurance
D130
D131
EP
10K
100K
—
—
E/W -40°C to +85°C
VPR
VDD for Read
VMIN
5.5
V
VMIN = Minimum operating
voltage
D132
VIE
3.0
4.5
—
—
5.5
5.5
V
V
VDD for Block Erase
Using ICSP™ port, +25°C
Using ICSP™ port, +25°C
D132A VIW
VDD for Externally Timed Erase
or Write
D132B VPEW VDD for Self-Timed Write
VMIN
—
5.5
V
VMIN = Minimum operating
voltage
D133
TIE
—
1
4
—
—
ms
ICSP Block Erase Cycle Time
VDD ≥ 4.5V
D133A TIW
—
ms VDD ≥ 4.5V, +25°C
ICSP Erase or Write Cycle Time
(externally timed)
D133A TIW
Self-Timed Write Cycle Time
—
2
—
—
ms
D134 TRETD Characteristic Retention
40
100
Year Provided no other
specifications are violated
D135
IDDP
Supply Current during
Programming
—
10
—
mA
†
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
© 2008 Microchip Technology Inc.
DS39631E-page 337
MICROCHIP [ MICROCHIP ]
