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PIC18F4431-I/P 参数 Datasheet PDF下载

PIC18F4431-I/P图片预览
型号: PIC18F4431-I/P
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚增强型闪存微控制器采用纳瓦技术,高性能PWM和A / D [28/40/44-Pin Enhanced Flash Microcontrollers with nanoWatt Technology, High-Performance PWM and A/D]
分类和应用: 闪存微控制器
文件页数/大小: 392 页 / 3127 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2331/2431/4331/4431  
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS  
Standard Operating Conditions (unless otherwise stated)  
Operating temperature -40°C TA +85°C for industrial  
-40°C TA +125°C for extended  
DC CHARACTERISTICS  
Param  
Sym  
No.  
Characteristic  
Min  
Typ†  
Max  
Units  
Conditions  
Internal Program Memory  
Programming Specifications(1)  
D110  
D112  
D113  
VPP  
IPP  
Voltage on MCLR/VPP pin  
Current into MCLR/VPP pin  
9.00  
13.25  
300  
1
V
(Note 3)  
A  
mA  
IDDP  
Supply Current during  
Programming  
Data EEPROM Memory  
D120  
ED  
Byte Endurance  
100K  
VMIN  
1M  
E/W -40C to +85C  
D121 VDRW VDD for Read/Write  
5.5  
V
Using EECON to read/write  
VMIN = Minimum operating  
voltage  
D122 TDEW Erase/Write Cycle Time  
D123 TRETD Characteristic Retention  
4
ms  
40  
Year Provided no other  
specifications are violated  
D124  
TREF  
Number of Total Erase/Write  
Cycles before Refresh(2)  
1M  
10M  
E/W -40°C to +85°C  
Program Flash Memory  
Cell Endurance  
D130  
D131  
EP  
10K  
100K  
E/W -40C to +85C  
VPR  
VDD for Read  
VMIN  
5.5  
V
VMIN = Minimum operating  
voltage  
D132  
VIE  
VDD for Block Erase  
4.5  
4.5  
5.5  
5.5  
V
V
Using ICSP™ port  
Using ICSP port  
D132A VIW  
VDD for Externally Timed Erase  
or Write  
D132B VPEW VDD for Self-Timed Write  
VMIN  
5.5  
V
VMIN = Minimum operating  
voltage  
D133  
TIE  
ICSP™ Block Erase Cycle Time  
1
4
ms VDD > 4.5V  
ms VDD > 4.5V  
D133A TIW  
ICSP Erase or Write Cycle Time  
(externally timed)  
D133A TIW  
Self-Timed Write Cycle Time  
2
ms  
D134 TRETD Characteristic Retention  
40  
100  
Year Provided no other  
specifications are violated  
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance  
only and are not tested.  
Note 1: These specifications are for programming the on-chip program memory through the use of table write  
instructions.  
2: Refer to Section 7.9 “Using the Data EEPROM” for a more detailed discussion on data EEPROM  
endurance.  
3: Required only if Single-Supply Programming is disabled.  
2010 Microchip Technology Inc.  
DS39616D-page 341