PIC18F2331/2431/4331/4431
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +85°C for industrial
-40°C TA +125°C for extended
DC CHARACTERISTICS
Param
Sym
No.
Characteristic
Min
Typ†
Max
Units
Conditions
Internal Program Memory
Programming Specifications(1)
D110
D112
D113
VPP
IPP
Voltage on MCLR/VPP pin
Current into MCLR/VPP pin
9.00
—
—
—
—
13.25
300
1
V
(Note 3)
A
mA
IDDP
Supply Current during
Programming
—
Data EEPROM Memory
—
D120
ED
Byte Endurance
100K
VMIN
1M
—
E/W -40C to +85C
D121 VDRW VDD for Read/Write
5.5
V
Using EECON to read/write
VMIN = Minimum operating
voltage
—
—
—
D122 TDEW Erase/Write Cycle Time
D123 TRETD Characteristic Retention
4
ms
40
—
Year Provided no other
specifications are violated
—
D124
TREF
Number of Total Erase/Write
Cycles before Refresh(2)
1M
10M
E/W -40°C to +85°C
Program Flash Memory
Cell Endurance
—
D130
D131
EP
10K
100K
—
E/W -40C to +85C
VPR
VDD for Read
VMIN
5.5
V
VMIN = Minimum operating
voltage
—
—
D132
VIE
VDD for Block Erase
4.5
4.5
5.5
5.5
V
V
Using ICSP™ port
Using ICSP port
D132A VIW
VDD for Externally Timed Erase
or Write
—
D132B VPEW VDD for Self-Timed Write
VMIN
5.5
V
VMIN = Minimum operating
voltage
D133
TIE
ICSP™ Block Erase Cycle Time
—
1
4
—
—
ms VDD > 4.5V
ms VDD > 4.5V
D133A TIW
ICSP Erase or Write Cycle Time
(externally timed)
—
D133A TIW
Self-Timed Write Cycle Time
—
2
—
—
ms
D134 TRETD Characteristic Retention
40
100
Year Provided no other
specifications are violated
†
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Refer to Section 7.9 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if Single-Supply Programming is disabled.
2010 Microchip Technology Inc.
DS39616D-page 341
MICROCHIP [ MICROCHIP ]
