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PIC18F4431-I/P 参数 Datasheet PDF下载

PIC18F4431-I/P图片预览
型号: PIC18F4431-I/P
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚增强型闪存微控制器采用纳瓦技术,高性能PWM和A / D [28/40/44-Pin Enhanced Flash Microcontrollers with nanoWatt Technology, High-Performance PWM and A/D]
分类和应用: 闪存微控制器
文件页数/大小: 392 页 / 3127 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2331/2431/4331/4431  
NEGF  
Negate f  
NOP  
No Operation  
Syntax:  
[ label ] NEGF f [,a]  
Syntax:  
[ label ] NOP  
None  
Operands:  
0 f 255  
a [0,1]  
Operands:  
Operation:  
Status Affected:  
Encoding:  
No operation  
None  
Operation:  
( f ) + 1 f  
Status Affected:  
Encoding:  
N, OV, C, DC, Z  
0000  
1111  
0000  
xxxx  
0000  
xxxx  
0000  
xxxx  
0110  
110a  
ffff  
ffff  
Description:  
Location, ‘f’, is negated using two’s  
complement. The result is placed in the  
data memory location, ‘f’. If ‘a’  
is ‘0’, the Access Bank will be selected,  
overriding the BSR value. If ‘a’ = 1, then  
the bank will be selected as per the  
BSR value.  
Description:  
Words:  
No operation.  
1
1
Cycles:  
Q Cycle Activity:  
Q1  
Q2  
Q3  
No  
operation  
Q4  
Decode  
No  
No  
operation  
Words:  
Cycles:  
1
1
operation  
Example:  
None.  
Q Cycle Activity:  
Q1  
Q2  
Q3  
Q4  
Decode  
Read  
register ‘f’  
Process  
Data  
Write  
register ‘f’  
Example:  
NEGF  
REG, 1  
Before Instruction  
REG  
After Instruction  
REG  
=
0011 1010 [0x3A]  
1100 0110 [0xC6]  
=
2010 Microchip Technology Inc.  
DS39616D-page 311  
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