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PIC18LF4320-I/ML 参数 Datasheet PDF下载

PIC18LF4320-I/ML图片预览
型号: PIC18LF4320-I/ML
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚高性能,增强型闪存微控制器与10位A / D和纳瓦技术 [28/40/44-Pin High-Performance, Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路时钟
文件页数/大小: 388 页 / 6899 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2220/2320/4220/4320  
7.7  
Operation During Code-Protect  
7.8  
Using the Data EEPROM  
Data EEPROM memory has its own code-protect bits in  
configuration words. External read and write opera-  
tions are disabled if either of these mechanisms are  
enabled.  
The data EEPROM is a high-endurance, byte address-  
able array that has been optimized for the storage of  
frequently changing information (e.g., program vari-  
ables or other data that are updated often). Frequently  
changing values will typically be updated more often  
than specification D124 or D124A. If this is not the  
case, an array refresh must be performed. For this  
reason, variables that change infrequently (such as  
constants, IDs, calibration, etc.) should be stored in  
Flash program memory.  
The microcontroller itself can both read and write to the  
internal Data EEPROM regardless of the state of the  
code-protect configuration bit. Refer to Section 23.0  
“Special Features of the CPU” for additional  
information.  
A simple data EEPROM refresh routine is shown in  
Example 7-3.  
Note:  
If data EEPROM is only used to store  
constants and/or data that changes rarely,  
an array refresh is likely not required. See  
specification D124 or D124A.  
EXAMPLE 7-3:  
DATA EEPROM REFRESH ROUTINE  
CLRF  
BCF  
BCF  
BCF  
BSF  
EEADR  
; Start at address 0  
; Set for memory  
; Set for Data EEPROM  
; Disable interrupts  
; Enable writes  
; Loop to refresh array  
; Read current address  
;
; Write 55h  
;
; Write AAh  
; Set WR bit to begin write  
; Wait for write to complete  
EECON1, CFGS  
EECON1, EEPGD  
INTCON, GIE  
EECON1, WREN  
LOOP  
BSF  
EECON1, RD  
55h  
EECON2  
AAh  
EECON2  
EECON1, WR  
EECON1, WR  
$-2  
MOVLW  
MOVWF  
MOVLW  
MOVWF  
BSF  
BTFSC  
BRA  
INCFSZ EEADR, F  
; Increment address  
BRA  
Loop  
; Not zero, do it again  
BCF  
BSF  
EECON1, WREN  
INTCON, GIE  
; Disable writes  
; Enable interrupts  
TABLE 7-1:  
REGISTERS ASSOCIATED WITH DATA EEPROM MEMORY  
Value on  
all other  
Resets  
Value on:  
POR, BOR  
Name  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
INTCON  
EEADR  
EEDATA  
GIE/GIEH PEIE/GIEL TMR0IE  
EEPROM Address Register  
EEPROM Data Register  
INTE  
RBIE  
TMR0IF  
INTF  
RBIF  
0000 000x 0000 000u  
0000 0000 0000 0000  
0000 0000 0000 0000  
EECON2 EEPROM Control Register 2 (not a physical register)  
EECON1  
IPR2  
EEPGD  
OSCFIP  
OSCFIF  
OSCFIE  
CFGS  
CMIP  
CMIF  
CMIE  
FREE  
EEIP  
EEIF  
EEIE  
WRERR WREN  
WR  
RD  
xx-0 x000 uu-0 u000  
BCLIP  
BCLIF  
BCLIE  
LVDIP  
LVDIF  
LVDIE  
TMR3IP CCP2IP 11-1 1111 ---1 1111  
TMR3IF CCP2IF 00-0 0000 ---0 0000  
TMR3IE CCP2IE 00-0 0000 ---0 0000  
PIR2  
PIE2  
Legend:  
x= unknown, u= unchanged, r= reserved, -= unimplemented, read as ‘0’.  
Shaded cells are not used during Flash/EEPROM access.  
DS39599C-page 84  
2003 Microchip Technology Inc.