PIC16F688
14.4 DC Characteristics: PIC16F688-E (Extended)
Standard Operating Conditions (unless otherwise stated)
DC CHARACTERISTICS
Operating temperature
-40°C ≤ TA ≤ +125°C for extended
Conditions
Units
Param
No.
Device Characteristics Min
Typ†
Max
VDD
Note
D020E Power-down Base
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.05
0.15
0.35
1
9
11
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
2.0
3.0
5.0
2.0
3.0
5.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
3.0
5.0
WDT, BOR, Comparators, VREF and
T1OSC disabled
Current (IPD)(2)
15
D021E
28
WDT Current(1)
BOR Current(1)
2
30
3
35
D022E
D023E
42
85
32
60
120
30
45
75
39
59
98
4.5
5
65
127
45
Comparator Current(1), both
comparators enabled
78
160
70
D024E
D025E*
D026E
D027E
CVREF Current(1) (high range)
CVREF Current(1) (low range)
T1OSC Current(1), 32.768 kHz
90
120
91
117
156
25
30
6
40
0.30
0.36
12
A/D Current(1), no conversion in
progress
16
*
These parameters are characterized but not tested.
†
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
DS41203D-page 148
© 2007 Microchip Technology Inc.
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